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M29DW323DB90ZA6T

Description
Flash, 2MX16, 90ns, PBGA63, 7 X 11 MM, 0.80 MM PITCH, TFBGA-63
Categorystorage    storage   
File Size881KB,51 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M29DW323DB90ZA6T Overview

Flash, 2MX16, 90ns, PBGA63, 7 X 11 MM, 0.80 MM PITCH, TFBGA-63

M29DW323DB90ZA6T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionTFBGA,
Contacts63
Reach Compliance Codenot_compliant
ECCN code3A991.B.1.A
Maximum access time90 ns
Other featuresBOTTOM BOOT BLOCK
Spare memory width8
startup blockBOTTOM
JESD-30 codeR-PBGA-B63
JESD-609 codee0
length11 mm
memory density33554432 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals63
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn63Pb37)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
typeNOR TYPE
width7 mm
M29DW323DT
M29DW323DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
SUPPLY VOLTAGE
– V
CC
= 2.7V to 3.6V for Program, Erase
and Read
– V
PP
=12V for Fast Program (optional)
ACCESS TIME: 70, 90ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program
MEMORY BLOCKS
– Dual Bank Memory Array: 8Mbit+24Mbit
– Parameter Blocks (Top or Bottom
Location)
DUAL OPERATIONS
– Read in one bank while Program or Erase
in other
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
V
PP
/WP PIN for FAST PROGRAM and
WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
– 64 bit Security Code
EXTENDED MEMORY BLOCK
– Extra block used as security block or to
store additional information
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29DW323DT: 225Eh
– Bottom Device Code M29DW323DB:
225Fh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA63 (ZA)
7 x 11mm
FBGA
TFBGA48 (ZE)
6 x 8mm
March 2004
1/51
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