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GC4413

Description
100 V, SILICON, PIN DIODE
Categorysemiconductor    Discrete semiconductor   
File Size148KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

GC4413 Overview

100 V, SILICON, PIN DIODE

GC4413 Parametric

Parameter NameAttribute value
Minimum breakdown voltage100 V
Number of components1
stateActive
Diode typePIN DIODE
applicationATTENUATOR; SWITCHING
structureSINGLE
Maximum diode capacitance0.7500 pF
Diode component materialsSILICON
Maximum diode forward resistance0.3000 ohm
frequency bandULTRA HIGH FREQUENCY TO KU BAND
jesd_30_codeX-XUUC-N
jesd_609_codee0
Minority Carrier Lifetime Rating1.2 µs
moisture_sensitivity_levelNOT SPECIFIED
Packaging MaterialsUNSPECIFIED
packaging shapeUNSPECIFIED
Package SizeUNCASED CHIP
eak_reflow_temperature__cel_NOT SPECIFIED
qualification_statusCOMMERCIAL
eference_standardMIL-19500
surface mountYES
CraftsmanshipPOSITIVE-INTRINSIC-NEGATIVE
terminal coatingTIN LEAD
Terminal formNO LEAD
Terminal locationUPPER
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
dditional_featureHIGH RELIABILITY
GC4410 – GC4495
TM
®
CONTROL DEVICES – HIGH VOLTAGE PIN DIODES
RoHS Compliant
DESCRIPTION
The GC4400 series are high voltage, high power (cathode base) PIN diodes. These
high resistivity silicon devices are glass passivated for high stability and reliability
and have been proven by thousands of device hours in high reliability systems.
Each device can withstand storage temperatures from -65°C to +200°C and will
operate over the range from -55°C to +150°C. All devices meet or exceed military
environmental specifications of MIL-PRF-19500.
The GC4400 series will operate typically with +50 mA forward bias. Breakdown
voltages are available up to 750 volts. Consult the factory for higher voltage devices.
KEY FEATURES
Available as packaged devices or
as chips for hybrid applications
www.MICROSEMI.com
High power handling
Suitable for application to 18Ghz
Low Loss
Low Distortion
RoHS Compliant
1
APPLICATIONS
The GC4400 series can be used in RF circuits as an on/off element, as a switch, or
as a current controlled resistor in attenuators extending over the frequency range
from UHF through Ku band.
Switch applications include high speed switches (ECM systems), TR or lobing
switches, channel or antenna selection switches (telecommunications), duplexers
(radar) and digital phase shifters (phased arrays).
The GC4400 series can be used in RF circuits as an on/off at moderate RF power
levels.
Attenuator type applications include amplitude modulators, AGC attenuators, power
levelers and level set attenuators.
1 Products are supplied with a Gold finish and are
suitable for RoHS complaint assembly. Consult
factory for details.
APPLICATIONS/BENEFITS
TR Switches
Antenna Selector Switches
Duplexers
Digital Phase Shifters
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Leakage Current @80%
Minimum Rated V
B
Leakage Current @80%
Minimum Rated V
B
Operating Temperature
Storage Temperature
GC441X
GC443X
GC449X
Symbol
I
R
I
R
T
OP
T
STG
Value
0.5
1.0
-55 to +150
-65 to +200
Unit
uA
uA
GC4410 - GC4495
ºC
ºC
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
www.MICROSEMI.com
H
Specifications are subject to change, consult the factory for further information.
These devices are ESD sensitive and must be handled using ESD precautions.
Copyright
2006
Rev: 2009-02-03
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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