BC857W-B datasheet, PDF - EEWORLD Datasheet

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BC857W-B: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size351KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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BC857W-B Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN

BC857W-B Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	220
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.1 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

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SEMICONDUCTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION .

BC856W/7W/8W

EPITAXIAL PLANAR PNP TRANSISTOR

E

FEATURES

・For

Complementary With NPN Type BC846W/847W/848W.

A

J

G

M

B

M

2

1

3

D

P

MAXIMUM RATING (Ta=25℃)

C

CHARACTERISTIC

BC856W

Collector-Base Voltage

BC857W

BC858W

BC856W

Collector-Emitter

Voltage

BC857W

BC858W

BC856W

Emitter-Base Voltage

BC857W

BC858W

Collector Current

Emitter Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

SYMBOL

RATING

-80

UNIT

H

N

K

N

DIM

A

B

C

D

E

G

H

J

K

L

M

N

P

MILLIMETERS

_

2.00 + 0.20

_

1.25 + 0.15

_

0.90 + 0.10

0.3+0.10/-0.05

_

2.10 + 0.20

0.65

0.15+0.1/-0.06

1.30

0.00~0.10

0.70

_

0.42 + 0.10

0.10 MIN

0.1 MAX

V

CBO

-50

-30

-65

V

1. EMITTER

2. BASE

3. COLLECTOR

V

CEO

-45

-30

-5

V

L

USM

V

EBO

-5

I

C

I

E

P

C

T

j

T

stg

-100

100

150

-55½150

mA

mW

℃

Type Name

Marking

Lot No.

MARK SPEC

TYPE

MARK

BC856W-A

3A

BC856W-B

3B

BC857W-A

3E

BC857W-B

3F

BC857W-C

3G

BC858W-A

3J

BC858W-B

3K

BC858W-C

3L

2008. 8. 29

Revision No : 4

1/3

BC857W-B Related Products

	BC857W-B	BC858W-A	BC858W-B	BC856W-A	BC857W-A	BC858W-C	BC856W-B	BC857W-C
Description	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	45 V	30 V	30 V	65 V	45 V	30 V	65 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	220	125	220	125	125	420	220	420
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz
Maker	KEC	-	KEC	KEC	KEC	KEC	KEC	KEC

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