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MG1013-16

Description
18 GHz - 26.5 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
Categorysemiconductor    Discrete semiconductor   
File Size159KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet View All

MG1013-16 Overview

18 GHz - 26.5 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE

GUNN Diodes
TM
®
Cathode Heat Sink
MG1001 – MG1061
Discrete Frequency: Cathode Heatsink
Features
CW Designs to 500 mW
Pulsed Designs to 10 W
Frequency Coverage Specified from 5.9–95 GHz
Low Phase Noise
High Reliability
Applications
Motion Detectors
Transmitters and Receivers
Beacons
Automotive Collision Avoidance Radars
Radars
Radiometers
Instrumentation
Description
Microsemi’s GaAs Gunn diodes, epi-down (cathode
heatsink), are fabricated from epitaxial layers grown at
MSC by the Vapor Phase Epitaxy technique. The layers
are processed using proprietary techniques resulting in
low phase and 1/f noise. MDT Gunn diodes are
available in a variety of microwave ceramic packages
are available for operation from 5–110 GHz.
Copyright
2008
Rev: 2009-01-19
Microsemi
Microwave Products
Page 1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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