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BZW06-9V4B

Description
600W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, F126, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size193KB,7 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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BZW06-9V4B Overview

600W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, F126, 2 PIN

BZW06-9V4B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
package instructionO-PALF-W2
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Maximum breakdown voltage11.6 V
Minimum breakdown voltage10.5 V
Breakdown voltage nominal value11 V
Shell connectionISOLATED
Maximum clamping voltage20.3 V
ConfigurationSINGLE
Minimum diode capacitance1250 pF
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation1.7 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage9.4 V
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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