IS64WV6416BLL
IS61WV6416BLL
®
Long-term Support
World Class Quality
64K x 16 HIGH-SPEED CMOS STATIC RAM
APRIL 2019
FEATURES
• High-speed access time:
12 ns: 3.3V + 10%
15 ns: 2.5V-3.6V
• CMOS low power operation:
50 mW (typical) operating
25 µW (typical) standby
• TTL compatible interface levels
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Automotive Temperature Available
• Lead-free available
bit static RAM organized as 65,536 words by 16 bits.
It is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with in-
novative circuit design techniques, yields access times as
fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low
power consumption.
When
CE
is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE
and
OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB)
access.
The IS61/64WV6416BLL is packaged in the JEDEC stan-
dard 44-pin TSOP-II, 44-pin 400-mil SOJ, and 48-pin mini
BGA (6mm x 8mm).
DESCRIPTION
The
ISSI
IS61/64WV6416BLL is a high-speed, 1,048,576-
FUNCTIONAL BLOCK DIAGRAM
A0-A15
DECODER
64K x 16
MEMORY ARRAY
V
DD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2019 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C1
04/01/2019
1
IS64WV6416BLL
IS61WV6416BLL
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
Write
WE
X
H
X
H
H
H
L
L
L
CE
H
L
L
L
L
L
L
L
L
OE
X
H
X
L
L
L
X
X
X
LB
X
X
H
L
H
L
L
H
L
UB
X
X
H
H
L
L
H
L
L
®
Long-term Support
World Class Quality
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
d
out
High-Z
High-Z
d
out
d
out
d
out
d
In
High-Z
High-Z
d
In
d
In
d
In
V
dd
Current
I
sb
1
, I
sb
2
I
cc
I
cc
I
cc
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
term
t
stg
P
t
V
dd
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
V
dd
Related to GND
Value
–0.5 to V
dd
+0.5
–65 to +150
1.5
-0.2 to +3.9
Unit
V
°C
W
V
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
OPERATING RANGE (V
dd
)
Range
Commercial
Industrial
Automotive
Ambient Temperature
0°C to +70°C
–40°C to +85°C
–40°C to +125°C
V
dd
(15 ns)
2.5V-3.6V
2.5V-3.6V
2.5V-3.6V
V
dd
(12 ns)
3.3V +
10%
3.3V +
10%
3.3V +
10%
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C1
04/01/2019
3
IS64WV6416BLL
IS61WV6416BLL
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
dd
= 2.5V-3.6V
Symbol
V
oH
V
oL
V
IH
V
IL
I
LI
I
Lo
Note:
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
dd
=
Min., I
oH
=
–1.0 mA
V
dd
=
Min., I
oL
=
1.0 mA
GND ≤
V
In
≤
V
dd
GND ≤
V
out
≤
V
dd
,
Outputs Disabled
®
Long-term Support
World Class Quality
Min.
2.3
—
2.0
–0.3
–2
–2
Max.
—
0.4
V
dd
+ 0.3
0.8
2
2
Unit
V
V
V
V
µA
µA
1.
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width 2.0 ns). Not 100% tested.
V
IH
(max.) = V
dd
+
0.3V dc; V
IH
(max.) = V
dd
+
2.0V Ac
(pulse width 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
dd
= 3.3V + 10%
Symbol
V
oH
V
oL
V
IH
V
IL
I
LI
I
Lo
Note:
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
dd
=
Min., I
oH
=
–4.0 mA
V
dd
=
Min., I
oL
=
8.0 mA
GND ≤
V
In
≤
V
dd
GND ≤
V
out
≤
V
dd
,
Outputs Disabled
Min.
2.4
—
2
–0.3
–2
–2
Max.
—
0.4
V
dd
+ 0.3
0.8
2
2
Unit
V
V
V
V
µA
µA
1.
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width 2.0 ns). Not 100% tested.
V
IH
(max.) = V
dd
+
0.3V dc; V
IH
(max.) = V
dd
+
2.0V Ac
(pulse width 2.0 ns). Not 100% tested.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C1
04/01/2019
stm32/stm8
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