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BYP35A1

Description
Rectifier Diode, 1 Element, 35A, 100V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size106KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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BYP35A1 Overview

Rectifier Diode, 1 Element, 35A, 100V V(RRM),

BYP35A1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current400 A
Number of components1
Maximum operating temperature215 °C
Maximum output current35 A
Maximum repetitive peak reverse voltage100 V
surface mountNO
BL
GALAXY ELECTRICAL
BYP35---SERIES
VOLTAGE RANGE:
50 -- 600 V
CURRENT: 35 A
SILICON PRESS-FIT DIODES
FEATURES
Norminal current 35A
Repetitive peak reverse voltage 600 V
Metal press -fit case with plastic cover
Casting compound has UL classification
94V-0
BYP
ф
11
0.1
ф
12.75
0.02
1.3
Kknurl0.8
5
±
0.2
ф
13
0.01
mm
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
BYP
35A05
BYP
35K05
V
RRM
V
RSM
I
F(AV)
50
60
BYP
35A1
BYP
35K1
100
120
BYP
35A2
BYP
35K2
200
240
35
BYP
35A3
BYP
35K3
300
360
BYP
35A4
BYP
35K4
400
480
BYP
35A6
BYP
35K6
600
700
Wire to anode
Wire to cathode
Repetitive peak reverse voltage
Surge peak reverse voltage
Max.average forward rectified current,
R-load
@T
C
=150
10.7
0.2
28.5min
UNITS
V
V
A
Repetitive peak forward current
f
15H
Z
(NOTE1)
I
FRM
110
A
Peak forward surge current,50/60 H
Z
half sine-wave
Forward voltage
Leakage current
Rating for fusing
@ I
F
=35A
@Tj=25
t 10ms
I
FSM
V
F
I
R
i
2
t
R
thc
T
j
T
S
360/400
1.1
100
660.0
0.8
- 55 --- +
215
- 55 --- +
215
A
V
μA
A
2
S
K/W
Thermal resistance junction to case
Operating junction temperature
Storage temperature range
NOTE: Max.case temperature T
C
=150 -Max.
www.galaxycn.com
Document Number 0292012
BL
GALAXY ELECTRICAL
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