1N6509_1 datasheet, PDF - EEWORLD Datasheet

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1N6509_1: Description16 ELEMENT, SILICON, TVS DIODE; Categorysemiconductor Discrete semiconductor; File Size251KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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1N6509_1 Overview

16 ELEMENT, SILICON, TVS DIODE

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1N6509

Isolated Diode Array with

HiRel MQ, MX, MV, and MSP Screening Options

SCOTTSDALE DIVISION

DESCRIPTION

These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated

by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering

diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to

the positive side of the power supply line and to ground (see Figure 1). An external

TVS diode may be added between the positive supply line and ground to prevent over-

voltage on the supply rail. They may also be used in fast switching core-driver

applications. This includes computers and peripheral equipment such as magnetic

cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding

applications. These arrays offer many advantages of integrated circuits such as high-

density packaging and improved reliability. This is a result of fewer pick and place

operations, smaller footprint, smaller weight, and elimination of various discrete

packages that may not be as user friendly in PC board mounting.

IMPORTANT:

For the most current data, consult

MICROSEMI’s

website:

http://www.microsemi.com

APPEARANCE

WWW .

Microsemi

14-PIN Ceramic DIP

FEATURES

•

Hermetic Ceramic Package

Isolated Diodes To Eliminate Cross-Talk Voltages

High Breakdown Voltage V

> 60 V at 10

µA

Low Leakage I

< 100nA at 40 V

Low Capacitance C < 8.0 pF

Options for screening in accordance with MIL-PRF-

19500/474 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers. For example, designate

MX1N6509 for a JANTX screen.

•

APPLICATIONS / BENEFITS

High Frequency Data Lines

RS-232 & RS-422 Interface Networks

Ethernet: 10 Base T

Computer I/O Ports

LAN

Switching Core Drivers

IEC 61000-4 Compatible (see circuit in figure 1)

61000-4-2 ESD: Air 15 kV, contact 8 kW

61000-4-4 (EFT): 40 A – 5/50 ns

61000-4-5 (surge): 12 A 8/20

µs

MAXIMUM RATINGS

•

Reverse Breakdown Voltage of 60 Vdc (Note 1 & 2)

Continuous Forward Current of 300 mA dc (Note 1 & 3)

Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)

400 mW Power Dissipation per Junction @ 25

600 mW Power Dissipation per Package @ 25

C (Note 4)

Operating Junction Temperature range –65 to +150

Storage Temperature range of –65 to +200

NOTE 1:

NOTE 2:

NOTE 3:

NOTE 4:

Each Diode

Pulsed: P

= 100 ms max; duty cycle <20%

Derate at 2.4 mA/ C above +25 C

Derate at 4.8 mW/ C above +25 C

MECHANICAL AND PACKAGING

•

14-PIN Ceramic DIP

Weight 2.05 grams (approximate)

Marking: Logo, part number, date code

Pin #1 to the left of the indent on top of package

Carrier tubes; 25 pcs (standard)

ELECTRICAL CHARACTERISTICS (Per Diode) @ 25

C unless otherwise specified

MAXIMUM

FORWARD

VOLTAGE

= 100 mA

(Note 1)

MAXIMUM

FORWARD

VOLTAGE

= 500 mA

(Note 1)

MAXIMUM

REVERSE

CURRENT

= 40 V

µA

MAXIMUM

CAPACITANCE

(PIN TO PIN)

= 0 V

F = 1 MHz

MAXIMUM

FORWARD

RECOVERY TIME

= 500 mA

MAXIMUM

REVERSE

RECOVERY TIME

trr

= 200 mA

= 20 mA

= 100 ohms

1N6509

PART

NUMBER

1N6509

1.5

0.1

8.0

NOTE 1:

Pulsed: P

= 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.



2003

5-03-2004 REV A

Microsemi

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Page 1

1N6509_1 Related Products

	1N6509_1	MSP1N6509	PAC500202151FAC000	PAC500302158FLB000	1N6509E3	MV1N6509	MX1N6509	MQ1N6509
Description	16 ELEMENT, SILICON, TVS DIODE	Trans Voltage Suppressor Diode, Unidirectional, 16 Element, Silicon, HERMETIC SEALED, CERAMIC, DIP-14	RESISTOR, WIRE WOUND, 5 W, 1 %, 2150 ohm, THROUGH HOLE MOUNT, AXIAL LEADED, GREEN	RESISTOR, WIRE WOUND, 5 W, 1 %, 2.15 ohm, THROUGH HOLE MOUNT, AXIAL LEADED, GREEN	Trans Voltage Suppressor Diode, Unidirectional, 16 Element, Silicon,	Trans Voltage Suppressor Diode, Unidirectional, 16 Element, Silicon, HERMETIC SEALED, CERAMIC, DIP-14	Trans Voltage Suppressor Diode, Unidirectional, 16 Element, Silicon, HERMETIC SEALED, CERAMIC, DIP-14	Trans Voltage Suppressor Diode, Unidirectional, 16 Element, Silicon, HERMETIC SEALED, CERAMIC, DIP-14
Is it Rohs certified?	-	incompatible	conform to	conform to	-	incompatible	incompatible	incompatible
package instruction	-	R-CDIP-T14	,	,	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14
Reach Compliance Code	-	unknow	unknown	unknown	compliant	unknown	compliant	unknown
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	-	COMPLEX	-	-	COMPLEX	COMPLEX	COMPLEX	COMPLEX
Diode component materials	-	SILICON	-	-	SILICON	SILICON	SILICON	SILICON
Diode type	-	TRANS VOLTAGE SUPPRESSOR DIODE	-	-	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	-	R-CDIP-T14	-	-	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14
JESD-609 code	-	e0	e3	e3	-	e0	e0	e0
Number of components	-	16	-	-	16	16	16	16
Number of terminals	-	14	2	2	14	14	14	14
Maximum operating temperature	-	150 °C	275 °C	275 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-	-65 °C	-	-	-55 °C	-65 °C	-65 °C	-65 °C
Package body material	-	CERAMIC, METAL-SEALED COFIRED	-	-	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	-	RECTANGULAR	TUBULAR PACKAGE	TUBULAR PACKAGE	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	IN-LINE	-	-	IN-LINE	IN-LINE	IN-LINE	IN-LINE
polarity	-	UNIDIRECTIONAL	-	-	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
surface mount	-	NO	NO	NO	NO	NO	NO	NO
technology	-	AVALANCHE	WIRE WOUND	WIRE WOUND	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal surface	-	TIN LEAD	Matte Tin (Sn)	Matte Tin (Sn)	-	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	-	THROUGH-HOLE	-	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	-	DUAL	-	-	DUAL	DUAL	DUAL	DUAL

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