BCP 28, BCP 48
PNP Silicon Darlington Transistors
•
For general AF applications
•
High collector current
•
High current gain
•
Complementary types: BCP 29/49 (NPN)
4
3
2
C(2,4)
B(1)
1
VPS05163
E(3)
EHA00008
Type
BCP 28
BCP 48
Maximum Ratings
Parameter
Marking
BCP 28
BCP 48
1=B
1=B
Pin Configuration
2=C
2=C
3=E
3=E
4=C
4=C
Package
SOT-223
SOT-223
Symbol
V
CEO
V
CBO
V
EBO
BCP 28
30
40
10
BCP 48
60
80
10
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 124 °C
Junction temperature
Storage temperature
Thermal Resistance
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
500
800
100
200
1.5
150
-65 ... 150
mA
mA
W
°C
Junction ambient
1)
Junction - soldering point
R
thJA
R
thJS
≤
75
≤
17
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
1
Oct-20-1999
BCP 28, BCP 48
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 100 µA,
I
B
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 60 V,
I
E
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
V
CB
= 60 V,
I
E
= 0 ,
T
A
= 150 °C
Emitter cutoff current
V
EB
= 4 V,
I
C
= 0
DC current gain 1)
I
C
= 100 µA,
V
CE
= 1 V
DC current gain 1)
I
C
= 10 mA,
V
CE
= 5 V
DC current gain 1)
I
C
= 100 mA,
V
CE
= 5 V
DC current gain 1)
I
C
= 500 mA,
V
CE
= 5 V
BCP 28
BCP 48
1) Pulse test: t
≤
300
µ
s, D = 2%
Unit
max.
V
typ.
V
(BR)CEO
BCP 28
BCP 48
V
(BR)CBO
BCP 28
BCP 48
V
(BR)EBO
I
CBO
BCP 28
BCP 48
I
CBO
BCP 28
BCP 48
I
EBO
h
FE
BCP 28
BCP 48
h
FE
BCP 28
BCP 48
h
FE
BCP 28
BCP 48
h
FE
4000
2000
-
-
-
-
20000
10000
-
-
-
-
10000
4000
-
-
-
-
4000
2000
-
-
-
-
-
-
-
-
-
-
10
10
100
-
-
-
-
100
100
40
80
10
-
-
-
-
-
-
30
60
-
-
-
-
nA
µA
nA
-
-
2
Oct-20-1999
BCP 28, BCP 48
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter saturation voltage1)
I
C
= 100 mA,
I
B
= 0.1 mA
Base-emitter saturation voltage 1)
I
C
= 100 mA,
I
B
= 0.1 mA
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
C
cb
f
T
Unit
max.
1
1.5
V
typ.
-
-
V
CEsat
V
BEsat
-
-
-
-
200
8
-
-
MHz
pF
1) Pulse test: t
≤
300
µ
s, D = 2%
3
Oct-20-1999
BCP 28, BCP 48
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
Collector cutoff current
I
CBO
=
f
(
T
A
)
V
CB
=
V
CEmax
* Package mounted on epoxy
P
tot
1.6
W
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
BCP 28/48
EHP00241
10
4
BCP 28/48
EHP00242
Ι
CBO
nA
max
10
3
10
2
T
A
T
S
typ
10
1
0
50
100
˚C
T
A
;
T
S
150
10
0
0
50
100
˚C
T
A
150
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 5V
10
3
MHz
f
T
BCP 28/48
EHP00243
Permissible pulse load
P
totmax
/
P
totDC
=
f
(
t
p
)
10
3
P
tot max
5
P
tot DC
BCP 28/48
EHP00244
t
p
D
=
T
t
p
T
10
2
5
10
2
5
10
1
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0
10
1
10
2
mA
10
3
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
Ι
C
4
Oct-20-1999
BCP 28, BCP 48
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 5V
10
6
h
FE
5
BCP 28/48
EHP00246
Collector-emitter saturation voltage
I
C
=
f
(
V
CEsat
),
h
FE
= 1000
BCP 28/48
EHP00247
10
3
Ι
C
mA
150 ˚C
25 ˚C
-50 ˚C
10
5
5
125 ˚C
25 ˚C
10
2
5
-55 ˚C
10
4
5
10
1
5
10
3
10
-1
10
0
10
1
10
2
mA 10
3
10
0
0
0.5
1.0
V
V
CEsat
1.5
Ι
C
Collector-base capacitance
C
CB
=
f
(
V
CBO
)
Emitter-base capacitance
C
EB
=
f
(
V
EBO
)
BCP 28/48
EHP00248
Base-emitter saturation voltage
I
C
=
f
(V
BEsat
),
h
FE
= 1000
BCP 28/48
EHP00249
10
C
EB0
(
C
CB0
)
10
3
pF
Ι
C
mA
150 ˚C
25 ˚C
-50 ˚C
10
2
C
CB0
5
C
EB0
5
10
1
5
0
10
-1
10
0
V
10
1
V
EB0
(
V
CB0
)
10
0
0
1.0
2.0
V
V
BEsat
3.0
5
Oct-20-1999
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