BCV26, BCV46
PNP Silicon Darlington Transistors
For general AF applications
High collector current
High current gain
Complementary types: BCV27, BCV47 (NPN)
3
Type
BCV26
BCV46
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 74 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
R
thJS
2
1
VPS05161
Marking
FDs
FEs
1=B
1=B
Pin Configuration
2=E
2=E
3=C
3=C
Package
SOT23
SOT23
Symbol
V
CEO
V
CBO
V
EBO
BCV26
30
40
10
BCV46
60
80
10
Unit
V
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
500
800
100
200
360
150
-65 ... 150
mA
mW
°C
210
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Jul-13-2001
BCV26, BCV46
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 100 µA,
I
B
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 60 V,
I
E
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
V
CB
= 60 V,
I
E
= 0 ,
T
A
= 150 °C
Emitter cutoff current
V
EB
= 4 V,
I
C
= 0
DC current gain 1)
I
C
= 100 µA,
V
CE
= 1 V
DC current gain 1)
I
C
= 10 mA,
V
CE
= 5 V
DC current gain 1)
I
C
= 100 mA,
V
CE
= 5 V
DC current gain 1)
I
C
= 0.5 A,
V
CE
= 5 V
BCV26
BCV46
BCV26
BCV46
h
FE
4000
2000
-
-
-
-
BCV26
BCV46
h
FE
20000
10000
-
-
-
-
BCV26
BCV46
h
FE
10000
4000
-
-
-
-
h
FE
4000
2000
-
-
-
-
BCV26
BCV46
I
EBO
BCV26
BCV46
I
CBO
-
-
-
-
-
-
10
10
100
I
CBO
-
-
-
-
100
100
BCV26
BCV46
V
(BR)EBO
BCV26
BCV46
V
(BR)CBO
40
80
10
-
-
-
-
-
-
V
(BR)CEO
30
60
-
-
-
-
typ.
max.
Unit
V
nA
µA
nA
-
1) Pulse test: t
≤
300
µ
s, D = 2%
2
Jul-13-2001
BCV26, BCV46
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter saturation voltage1)
I
C
= 100 mA,
I
B
= 0.1 mA
Base-emitter saturation voltage 1)
I
C
= 100 mA,
I
B
= 0.1 mA
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
C
cb
-
4.5
-
f
T
-
200
-
V
BEsat
-
-
1.5
V
CEsat
-
-
1
typ.
max.
Unit
V
MHz
pF
1) Pulse test: t
≤
300
µ
s, D = 2%
3
Jul-13-2001
BCV26, BCV46
Total power dissipation
P
tot
=
f
(
T
S
)
Collector-base capacitance
C
CB
=
f
(
V
CBO
)
Emitter-base capacitance
C
EB
=
f
(
V
EBO
)
BCV 26/46
EHP00291
400
10
C
EB0
(
C
CB0
)
mW
pF
300
P
tot
250
C
CB0
200
5
C
EB0
150
100
50
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
0
10
-1
10
0
V
10
1
V
EB0
(
V
CB0
)
Permissible pulse load
P
totmax
/
P
totDC
=
f
(
t
p
)
10
3
P
tot max
5
P
tot DC
BCV 26/46
EHP00292
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 5V
10
3
f
T
T
BCV 26/46
EHP00294
t
p
D
=
T
t
p
MHz
10
2
5
10
1
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
2
5
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
10
1
10
0
10
1
10
2
mA
10
3
Ι
C
4
Jul-13-2001
BCV26, BCV46
Base-emitter saturation voltage
I
C
=
f
(
V
BEsat
),
h
FE
= 1000
10
3
BCV 26/46
EHP00295
Collector-emitter saturation voltage
I
C
=
f
(
V
CEsat
),
h
FE
= 1000
10
3
BCV 26/46
EHP00296
Ι
C
mA
150 ˚C
25 ˚C
-50 ˚C
Ι
C
mA
150 ˚C
25 ˚C
-50 ˚C
10
2
5
10
2
5
10
1
5
10
1
5
10
0
0
1.0
2.0
V
V
BEsat
3.0
10
0
0
0.5
1.0
V
V
CEsat
1.5
Collector cutoff current
I
CBO
=
f
(
T
A
)
V
CB
=
V
CEmax
10
4
nA
BCV 26/46
EHP00297
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 5V
10
6
h
FE
5
BCV 26/46
EHP00298
Ι
CBO
10
3
max
10
5
5
10
2
typ
10
1
125 ˚C
25 ˚C
-55 ˚C
10
4
5
10
0
0
50
100
˚C
T
A
150
10
3
10
-1
10
0
10
1
10
2
mA 10
3
Ι
C
5
Jul-13-2001
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