IS61SF25618-8B datasheet, PDF - EEWORLD Datasheet

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IS61SF25618-8B: DescriptionCache SRAM, 256KX18, 8ns, CMOS, PBGA119, PLASTIC, BGA-119; Categorystorage storage; File Size106KB，16 Pages; ManufacturerIntegrated Silicon Solution ( ISSI )

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IS61SF25618-8B Overview

Cache SRAM, 256KX18, 8ns, CMOS, PBGA119, PLASTIC, BGA-119

IS61SF25618-8B Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	BGA
package instruction	PLASTIC, BGA-119
Contacts	119
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	8 ns
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B119
JESD-609 code	e0
length	22 mm
memory density	4718592 bit
Memory IC Type	CACHE SRAM
memory width	18
Number of functions	1
Number of terminals	119
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA119,7X17,50
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	2.41 mm
Maximum standby current	0.05 A
Minimum standby current	3.14 V
Maximum slew rate	0.18 mA
Maximum supply voltage (Vsup)	3.63 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
width	14 mm

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IS61SF25616

IS61SF25618

256K x 16, 256K x 18 SYNCHRONOUS

FLOW-THROUGH STATIC RAM

FEATURES

•

Fast access times: 8 ns, 8.5 ns, 10 ns, and 12 ns

Internal self-timed write cycle

Individual Byte Write Control and Global Write

Clock controlled, registered address, data inputs

and control signals

Pentium

or linear burst sequence control

using MODE input

Three chip enables for simple depth expansion

and address pipelining

Common data inputs and data outputs

JEDEC 100-Pin TQFP and

119-pin PBGA package

Single +3.3V +10%, –5% power supply

Power-down snooze mode

ISSI

DESCRIPTION

APRIL 2001

The

ISSI

IS61SF25616 and IS61SF25618 is a high-speed,

low-power synchronous static RAM designed to provide

a burstable, high-performance memory for high speed

networking and communication applications. It is organized

as 262,144 words by 16 bits and 18 bits, fabricated with

ISSI

's advanced CMOS technology. The device integrates

a 2-bit burst counter, high-speed SRAM core, and high-drive

capability outputs into a single monolithic circuit. All

synchronous inputs pass through registers controlled by

a positive-edge-triggered single clock input.

Write cycles are internally self-timed and are initiated by

the rising edge of the clock input. Write cycles can be from

one to four bytes wide as controlled by the write control

inputs.

Separate byte enables allow individual bytes to be written.

BW1

controls DQ1-8,

BW2

controls DQ9-16, conditioned

BWE

being LOW. A LOW on

input would cause all

bytes to be written.

Bursts can be initiated with either

ADSP

(Address Status

Processor) or

ADSC

(Address Status Cache Controller)

input pins. Subsequent burst addresses can be generated

internally by the IS61SF25616 and controlled by the

ADV

(burst address advance) input pin.

The mode pin is used to select the burst sequence order,

Linear burst is achieved when this pin is tied LOW.

Interleave burst is achieved when this pin is tied HIGH or

left floating.

FAST ACCESS TIME

Symbol

Parameter

Clock Access Time

Cycle Time

Frequency

100

8.5

Units

MHz

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

04/17/01

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