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MV32008

Description
GaAs Varactor Diodes Hyperabrupt
File Size190KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet View All

MV32008 Overview

GaAs Varactor Diodes Hyperabrupt

GaAs Varactor Diodes
Hyperabrupt
TM
®
MV30011 – MV34010
Features
High Q Values for Higher Frequency Performance
Large Tuning Ratios
Low Reverse Current
Gamma Values to 1.5
Available as Bondable Chips and as
Packaged Diodes
Available in Chip-on-Board Packaging
Custom Designs Available
Applications
Description
Microsemi’s GaAs hyperabrupt junction varactor
diodes are fabricated from epitaxial layers grown
at Microsemi by the Chemical Vapor Deposition
technique. The layers are processed at using
proprietary techniques resulting in varactors with
constant gamma, high Q factor and repeatable
tuning curves. These varactors are available in a
variety of microwave ceramic packages or
bondable chips for operation from UHF to
millimeter wave frequencies.
Breakdown Voltage
50 mA @ 25°C
+20 dBm @ 25°C
-55°C to +175°C
-55°C to +200°C
VCOs
Phase-Locked Oscillators
High Q Tunable Filters
Phase Shifters
Pre-Selectors
Maximum Ratings
Reverse Voltage
Forward Current
Incident Power
Operating Temperature
Storage Temperature
IMPORTANT:
For the most current data, consult our website:
www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information
.
These devices are ESD sensitive and must be handled using ESD precautions.
1
The MS3000 Series of products are
supplied with a RoHS complaint Gold finish
.
Copyright
2008
Rev: 2009-05-11
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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