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BS62LV1603EI55

Description
Standard SRAM, 2MX8, 55ns, CMOS, PDSO44
Categorystorage    storage   
File Size264KB,9 Pages
ManufacturerBrilliance
Download Datasheet Parametric Compare View All

BS62LV1603EI55 Overview

Standard SRAM, 2MX8, 55ns, CMOS, PDSO44

BS62LV1603EI55 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBrilliance
package instructionTSOP, TSOP44,.46,32
Reach Compliance Codeunknown
Maximum access time55 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G44
JESD-609 codee0
memory density16777216 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level3
Number of terminals44
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSOP44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
power supply3/3.3 V
Certification statusNot Qualified
Minimum standby current1.5 V
Maximum slew rate0.046 mA
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
BSI
FEATURES
Very Low Power/Voltage CMOS SRAM
2M X 8 bit
GENERAL DESCRIPTION
BS62LV1603
• Vcc operation voltage : 2.7V ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 45mA (@55ns) operating current
I -grade: 46mA (@55ns) operating current
C-grade: 36mA (@70ns) operating current
I -grade: 37mA (@70ns) operating current
3.0uA (Typ.) CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
The BS62LV1603 is a high performance , very low power CMOS Static
Random Access Memory organized as 2048K words by 8 bits and
operates from a range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
3.0uA at 3.0V/25
o
C and maximum access time of 55ns at 3.0V/85
o
C.
Easy memory expansion is provided by an active LOW chip enable (CE1)
, an active HIGH chip enable (CE2) and active LOW output enable (OE)
and three-state output drivers.
The BS62LV1603 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV1603 is available in 48B BGA and 44L TSOP2 packages.
PRODUCT FAMILY
PRODUCT
FAMILY
BS62LV1603EC
BS62LV1603FC
BS62LV1603EI
BS62LV1603FI
OPERATING
TEMPERATURE
+0
O
C to +70
O
C
-40
O
C to +85
O
C
Vcc
RANGE
2.7V ~ 3.6V
2.7V ~ 3.6V
SPEED
( ns )
55ns : 3.0~3.6V
70ns : 2.7~3.6V
( I
CCSB1
, Max )
POWER DISSIPATION
STANDBY
Operating
( I
CC
, Max )
PKG TYPE
Vcc=3V
Vcc=3V
55ns
Vcc=3V
70ns
55 / 70
55 / 70
10uA
20uA
45mA
46mA
TSOP2-44
BGA-48-0912
TSOP2-44
37mA
BGA-48-0912
36mA
PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE1
NC
NC
DQ0
DQ1
VCC
GND
DQ2
DQ3
NC
A20
WE
A19
A18
A17
A16
A15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
5
6
A5
A6
A7
OE
CE2
A8
NC
NC
DQ7
DQ6
GND
VCC
DQ5
DQ4
NC
NC
A9
A10
A11
A12
A13
A14
FUNCTIONAL BLOCK DIAGRAM
BS62LV1603EC
BS62LV1603EI
A20
A13
A17
A15
A18
A16
A14
A12
A7
A6
A5
A4
Address
Input
Buffer
24
Row
Decoder
4096
Memory Array
4096 X 4096
4096
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE1
CE2
WE
OE
Vdd
Gnd
8
Data
Input
Buffer
8
Column I/O
Write Driver
Sense Amp
512
Column Decoder
18
Control
Address Input Buffer
2
3
4
A
NC
NC
OE
A0
A1
A2
CE2
B
NC
A3
A4
CE1
NC
NC
8
C
D0
NC
A5
A6
Data
Output
Buffer
8
D4
D
VSS
D1
A17
A7
D5
VCC
E
VCC
D3
D2
VCC
A16
D6
VSS
F
NC
A14
A15
NC
D7
A11A9 A8 A3 A2 A1 A0A10 A19
G
NC
A20
A12
A13
WE
NC
H
A18
A8
A9
A10
A11
A19
48-ball BGA top view
Brilliance Semiconductor, Inc
. reserves the right to modify document contents without notice.
R0201-BS62LV1603
1
Revision 1.1
Jan.
2004

BS62LV1603EI55 Related Products

BS62LV1603EI55 BS62LV1603EC70 BS62LV1603EC55 BS62LV1603EI70 BS62LV1603FC70 BS62LV1603FC55 BS62LV1603FI70 BS62LV1603FI55
Description Standard SRAM, 2MX8, 55ns, CMOS, PDSO44 Standard SRAM, 2MX8, 70ns, CMOS, PDSO44 Standard SRAM, 2MX8, 55ns, CMOS, PDSO44 Standard SRAM, 2MX8, 70ns, CMOS, PDSO44 Standard SRAM, 2MX8, 70ns, CMOS, PBGA48 Standard SRAM, 2MX8, 55ns, CMOS, PBGA48 Standard SRAM, 2MX8, 70ns, CMOS, PBGA48 Standard SRAM, 2MX8, 55ns, CMOS, PBGA48
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Brilliance Brilliance Brilliance Brilliance Brilliance Brilliance Brilliance Brilliance
package instruction TSOP, TSOP44,.46,32 TSOP, TSOP44,.46,32 TSOP, TSOP44,.46,32 TSOP, TSOP44,.46,32 FBGA, BGA48,6X8,30 FBGA, BGA48,6X8,30 FBGA, BGA48,6X8,30 FBGA, BGA48,6X8,30
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
Maximum access time 55 ns 70 ns 55 ns 70 ns 70 ns 55 ns 70 ns 55 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0
memory density 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 8 8 8 8 8 8
Humidity sensitivity level 3 3 3 3 3 3 3 3
Number of terminals 44 44 44 44 48 48 48 48
word count 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words
character code 2000000 2000000 2000000 2000000 2000000 2000000 2000000 2000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 70 °C 70 °C 85 °C 70 °C 70 °C 85 °C 85 °C
organize 2MX8 2MX8 2MX8 2MX8 2MX8 2MX8 2MX8 2MX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP TSOP TSOP TSOP FBGA FBGA FBGA FBGA
Encapsulate equivalent code TSOP44,.46,32 TSOP44,.46,32 TSOP44,.46,32 TSOP44,.46,32 BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,30
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
power supply 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Minimum standby current 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
Maximum slew rate 0.046 mA 0.036 mA 0.045 mA 0.037 mA 0.036 mA 0.045 mA 0.037 mA 0.046 mA
surface mount YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING BALL BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm
Terminal location DUAL DUAL DUAL DUAL BOTTOM BOTTOM BOTTOM BOTTOM
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