HX6656NVNT datasheet, PDF - EEWORLD Datasheet

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HX6656NVNT: DescriptionOTP ROM, 32KX8, 25ns, CMOS, CDFP28, 0.500 X 0.720 INCH, CERAMIC, FP-28; Categorystorage storage; File Size150KB，12 Pages; ManufacturerHoneywell; Websitehttp://www.ssec.honeywell.com/

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HX6656NVNT Overview

OTP ROM, 32KX8, 25ns, CMOS, CDFP28, 0.500 X 0.720 INCH, CERAMIC, FP-28

HX6656NVNT Parametric

Parameter Name	Attribute value
Maker	Honeywell
Parts packaging code	DFP
package instruction	DFP,
Contacts	28
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	25 ns
JESD-30 code	R-CDFP-F28
length	18.288 mm
memory density	262144 bit
Memory IC Type	OTP ROM
memory width	8
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	32KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class V
Maximum seat height	3.048 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
width	12.7 mm

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Military & Space Products

32K x 8 ROM—SOI

FEATURES

RADIATION

• Fabricated with RICMOS

™

IV Silicon on Insulator

(SOI) 0.75

µm

Process (L

eff

= 0.6

µm)

• Total Dose Hardness through 1x10

rad(SiO

)

• Typical Operating Power <15 mW/MHz

• Dynamic and Static Transient Upset

Hardness through 1x10

rad(Si)/s

• Dose Rate Survivability through 1x10

rad(Si)/s

• Neutron Hardness through 1x10

-2

• SEU Immune

• Latchup Free

• Asynchronous Operation

• CMOS or TTL Compatible I/O

• Single 5 V

10% Power Supply

OTHER

• Read Cycle Times

< 17 ns (Typical)

≤

25 ns (-55 to 125°C)

HX6656

• Packaging Options

- 28-Lead Flat Pack (0.500 in. x 0.720 in.)

- 28-Lead DIP, MIL-STD-1835, CDIP2-T28

- 36-Lead Flat Pack (0.630 in. x 0.650 in.)

GENERAL DESCRIPTION

The 32K x 8 Radiation Hardened ROM is a high perform-

ance 32,768 word x 8-bit read only memory with industry-

standard functionality. It is fabricated with Honeywell’s

radiation hardened technology, and is designed for use in

systems operating in radiation environments. The ROM

operates over the full military temperature range and re-

quires only a single 5 V

10% power supply. The ROM is

available with either TTL or CMOS compatible I/O. Power

consumption is typically less than 15 mW/MHz in operation,

and less than 5 mW when de-selected. The ROM operation

is fully asynchronous, with an associated typical access

time of 14 ns.

Honeywell’s enhanced SOI RICMOS

™

IV (Radiation Insen-

sitive CMOS) technology is radiation hardened through the

use of advanced and proprietary design, layout, and pro-

cess hardening techniques. The RICMOS

™

IV process is a

5-volt, SIMOX CMOS technology with a 150 Å gate oxide

and a minimum drawn feature size of 0.75

µm

(0.6

µm

effective gate length—L

eff

). Additional features include

tungsten via plugs, Honeywell’s proprietary SHARP pla-

narization process, and a lightly doped drain (LDD) struc-

ture for improved short channel reliability.

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