HY5PS1G431CFP-S6I datasheet, PDF

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HY5PS1G431CFP-S6I: DescriptionDDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, FBGA-60; Categorystorage storage; File Size565KB，45 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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HY5PS1G431CFP-S6I Overview

DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, FBGA-60

HY5PS1G431CFP-S6I Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SK Hynix
Parts packaging code	BGA
package instruction	TFBGA, BGA60,9X11,32
Contacts	60
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	MULTI BANK PAGE BURST
Maximum access time	0.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	333 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B60
length	11.4 mm
memory density	1073741824 bit
Memory IC Type	DDR DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	60
word count	268435456 words
character code	256000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA60,9X11,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum slew rate	0.235 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm

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This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.7 / Nov. 2008

HY5PS1G431CFP-S6I Related Products

	HY5PS1G431CFP-S6I	HY5PS1G431CLFP-S6I	HY5PS1G431CFP-S5I	HY5PS1G431CLFP-S5I
Description	DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, FBGA-60	DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60	DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, FBGA-60	DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
Is it Rohs certified?	conform to	conform to	conform to	conform to
Parts packaging code	BGA	BGA	BGA	BGA
package instruction	TFBGA, BGA60,9X11,32	TFBGA, BGA60,9X11,32	TFBGA, BGA60,9X11,32	TFBGA, BGA60,9X11,32
Contacts	60	60	60	60
Reach Compliance Code	unknown	compliant	unknown	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST
Maximum access time	0.4 ns	0.4 ns	0.4 ns	0.4 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	333 MHz	333 MHz	333 MHz	333 MHz
I/O type	COMMON	COMMON	COMMON	COMMON
interleaved burst length	4,8	4,8	4,8	4,8
JESD-30 code	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60
length	11.4 mm	11.4 mm	11.4 mm	11.4 mm
memory density	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	4	4	4	4
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	60	60	60	60
word count	268435456 words	268435456 words	268435456 words	268435456 words
character code	256000000	256000000	256000000	256000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
organize	256MX4	256MX4	256MX4	256MX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA60,9X11,32	BGA60,9X11,32	BGA60,9X11,32	BGA60,9X11,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	NOT SPECIFIED	260
power supply	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES
Continuous burst length	4,8	4,8	4,8	4,8
Maximum slew rate	0.235 mA	0.235 mA	0.235 mA	0.235 mA
Maximum supply voltage (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	20	NOT SPECIFIED	20
width	8 mm	8 mm	8 mm	8 mm
Maker	SK Hynix	-	SK Hynix	SK Hynix

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