1N5807CB thru 1N5811CB
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-19500/742 and
is ideal for high-reliability applications where a failure cannot be tolerated. These industry-
recognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts
are hermetically sealed with voidless-glass construction using an internal “Category III”
metallurgical bond. These devices are also available in surface mount MELF package
configurations by adding a “US” suffix (see separate data sheet for 1N5807CBUS thru
1N5811CBUS). Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including standard, fast
and ultrafast device types in both through-hole and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
“E” Package
FEATURES
•
•
•
•
•
•
•
Popular JEDEC registered 1N5807 to 1N5811 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category
III”
Metallurgical bonds
JAN, JANTX, & JANTXV available per MIL-PRF-19500/742
Further screening options are available for JANS in
accordance with MIL-PRF-19500/742 by using a “SP” prefix
•
Surface mount equivalents also available in a square end-
cap MELF configuration with “US” suffix (see separate data
sheet for 1N5807CBUS thru 1N5811CBUS)
APPLICATIONS / BENEFITS
•
Ultrafast recovery 6 Amp rectifier series 50 to 150 V
•
Military and other high-reliability applications
•
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
•
High forward surge current capability
•
Low thermal resistance
•
Controlled avalanche with peak reverse power
capability
•
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
•
Junction Temperature: -65
o
C to +175
o
C
•
Storage Temperature: -65
o
C to +175
o
C
•
Average Rectified Forward Current (I
O
): 6 A @ T
L
= 75ºC
at 3/8 inch lead length (see note 1)
•
Thermal Resistance: 22 ºC/W junction to lead (L=.375 in)
•
Thermal Impedance: 1.5 ºC/W @ 10 ms heating time
•
Forward Surge Current (8.3 ms half sine) 125 Amps
•
Capacitance: 60 pF at 10 volts, f = 1 MHz
•
Solder temperature: 260ºC for 10 s (maximum)
•
•
•
•
•
•
•
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
over Copper.
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 750 mg
See package dimensions on last page
ELECTRICAL CHARACTERISTICS
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
VOLTS
BREAKDOWN
VOLTAGE
(MIN.)
@ 100μA
V
BR
VOLTS
AVERAGE
RECTIFIED
CURRENT
I
O1
@T
L
=75
º
C
(Note 1)
AMPS
AVERAGE
RECTIFIED
CURRENT
I
O2
@T
A
=55
º
C
Note 2
MAXIMUM
FORWARD
VOLTAGE
@4A
(8.3 ms pulse)
V
F
REVERSE
CURRENT
(MAX)
@ V
RWM
I
R
SURGE
CURRENT
(MAX)
I
FSM
(NOTE 3)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
t
rr
1N5807CB–1N5811CB
TYPE
1N5807CB
1N5809CB
1N5811CB
NOTE 1:
NOTE 2:
NOTE 3:
NOTE 4:
VOLTS
AMPS
ns
μA
o
o
o
o
25 C
100 C 25 C 125 C
50
60
6.0
3.0
0.875
0.800
5
525
125
30
100
110
6.0
3.0
0.875
0.800
5
525
125
30
150
160
6.0
3.0
0.875
0.800
5
525
125
30
Rated at T
L
= 75ºC at 3/8 inch lead length. Derate at 60 mA/ºC for T
L
above 75ºC.
Derate linearly at 25 mA/ºC above T
A
= 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where T
J(max
)
does not exceed 175ºC
o
T
A
= 25 C @ I
O
= 3.0 A and V
RWM
for ten 8.3 ms surges at 1 minute intervals
I
F
= 1.0 A, I
RM
= 1.0 A, I
R(REC)
= 0.10 A and di/dt = 100 A/µs min
Copyright
©
2008
2-25-2008 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N5807CB thru 1N5811CB
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RECTIFIERS
SCOTTSDALE DIVISION
SYMBOLS & DEFINITIONS
WWW .
Microsemi
.C
OM
Symbol
V
BR
V
RWM
V
F
I
R
C
t
rr
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
GRAPHS
FIGURE 1
TYPICAL FORWARD CURRENT
vs. FORWARD VOLTAGE
FIGURE 2
TYPICAL REVERSE CURRENT vs. VOLTAGE
1N5807CB–1N5811CB
FIGURE 3
OUTPUT CURRENT vs LEAD TEMPERATURE
Copyright
©
2008
2-25-2008 REV A
FIGURE 4
FORWARD PULSE CURRENT vs. DURATION
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Embedded System
京公网安备 11010802033920号
EEWORLD
