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1N6276A

Description
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size22KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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1N6276A Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

1N6276A Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionPLASTIC, CASE 1 , 2 PIN
Contacts2
Manufacturer packaging codeCASE 1
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum breakdown voltage16.8 V
Minimum breakdown voltage15.2 V
Breakdown voltage nominal value16 V
Shell connectionISOLATED
Maximum clamping voltage22.5 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.52 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage13.6 V
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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