1N6292 datasheet, PDF - EEWORLD Datasheet

1N6292: Description1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE; CategoryDiscrete semiconductor diode; File Size22KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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1N6292 Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
package instruction	PLASTIC, CASE 1, 2 PIN
Contacts	2
Manufacturer packaging code	CASE 1
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum breakdown voltage	82.5 V
Minimum breakdown voltage	67.5 V
Breakdown voltage nominal value	75 V
Shell connection	ISOLATED
Maximum clamping voltage	108 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
JESD-609 code	e0
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	1500 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	1.52 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	60.7 V
Maximum reverse current	5 µA
surface mount	NO
technology	AVALANCHE
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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