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1N6301E3

Description
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size22KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

1N6301E3 Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

1N6301E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-PALF-W2
Contacts2
Manufacturer packaging codeCASE 1
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum breakdown voltage187 V
Minimum breakdown voltage153 V
Breakdown voltage nominal value170 V
Shell connectionISOLATED
Maximum clamping voltage244 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.52 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage138 V
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
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