K6X0808T1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
0.1
History
Initial draft
revised
- errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type
revised
- Added commercial product.
Finalized
- Changed I
CC
from 3mA to 2mA
- Changed I
CC2
from 25mA to 20mA
- Changed I
SB
from 3mA to 0.4mA
- Changed I
SB1
for K6X0808T1D-F from 10µA to 6µA
- Changed I
SB1
for K6X0808T1D-F from 20µA to 10µA
- Changed I
DR
for K6X0808T1D-F 10µA to 6µA
- Changed I
DR
for K6X0808T1D-Q 20µA to 10µA
- Errata correction
Revised
- Changed I
SB
1
of Automotive product from 10µA to 25µA
- Changed I
DR
of Automotive product from 10µA to 25µA
- Added Lead Free Products
Draft Data
October 09, 2002
November 08, 2002
Remark
Preliminary
Preliminary
0.2
March 27, 2003
Preliminary
1.0
December 16, 2003
Final
2.0
March 27, 2005
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.0
March 2005
K6X0808T1D Family
FEATURES
•
Process Technology: Full CMOS28-
•
Organization: 32K x 8
•
Power Supply Voltage: 2.7~3.6V
•
Low Data Retention Voltage: 1.5V(Min)
•
Three state outputs
•
Package Type: 28-SOP-450, 28-TSOP1-0813.4F/R
CMOS SRAM
GENERAL DESCRIPTION
The K6X0808T1D families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
verious operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
32Kx8 bit Super Low Power and Low Voltage full CMOS Static RAM
PRODUCT FAMILY
Power Dissipation
Product Family
Operating Temperature Vcc Range
Speed
Standby
(I
SB1
, Max)
6µA
K6X0808T1D-F
K6X0808T1D-Q
Industrial(-40~85°C)
Automotive(-40~125°C)
2.7~3.6V
70
1)
/85ns
25µA
25mA
28-SOP-450, 28-TSOP1-0813.4F
Operating
(I
CC2,
Max)
PKG Type
K6X0808T1D-B
Industrial(0~70°C)
28-SOP-450, 28-TSOP1-0813.4F/R
1. The parameters are tested with 30pF test load
PIN DESCRIPTION
OE
A11
A9
A8
VCC A13
WE
WE
VCC
A13 A14
A12
A8
A7
A6
A9
A5
A4
A11
A3
OE
A3
A4
CS
A5
A6
I/O8
A7
I/O7 A12
A14
I/O6 VCC
WE
I/O5
A13
A8
I/O4
A9
A11
A10
OE
14
13
12
11
10
9
8
7
6
5
4
3
2
1
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
FUNCTIONAL BLOCK DIAGRAM
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
Clk gen.
Precharge circuit.
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
28-TSOP
Type1 - Forward
23
22
21
20
19
18
17
16
15
Row
Addresses
Row
select
Memory array
28-SOP
21
20
19
18
17
16
15
28-TSOP
Type1 - Reverse
21
22
23
24
25
26
27
28
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS
A10
CS
1
I/O
1
I/O
8
Data
cont
I/O Circuit
Column select
Data
cont
Column Addresses
Pin Name
A
0
~A
14
WE
CS
OE
Function
Address Inputs
Write Enable Input
Chip Select Input
Output Enable Input
Pin Name
I/O
1
~I/O
8
Vcc
Vss
NC
Function
Data Inputs/Outputs
WE
OE
Control
logic
Power
Ground
No connect
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
2
Revision 2.0
March 2005
K6X0808T1D Family
PRODUCT LIST
Commercial Temp. Products(0~70°C)
Part Name
K6X0808T1D-GB70
K6X0808T1D-GB85
K6X0808T1D-BB70
1)
K6X0808T1D-BB85
1)
K6X0808T1D-YB70
K6X0808T1D-YB85
K6X0808T1D-LB70
1)
K6X0808T1D-LB85
1)
K6X0808T1D-NB70
K6X0808T1D-NB85
CMOS SRAM
Industrial Temp. Products(-40~85°C)
Part Name
K6X0808T1D-GF70
K6X0808T1D-GF85
K6X0808T1D-GF70
1)
K6X0808T1D-GF85
1)
K6X0808T1D-YF70
K6X0808T1D-YF85
K6X0808T1D-LF70
1)
K6X0808T1D-LF85
1)
K6X0808T1D-NF70
K6X0808T1D-NF85
Atomotive Temp. Products(-40~125°C)
Part Name
K6X0808T1D-GQ70
K6X0808T1D-GQ85
K6X0808T1D-GQ70
1)
K6X0808T1D-GQ85
1)
K6X0808T1D-YQ70
K6X0808T1D-YQ85
K6X0808T1D-LQ70
1)
K6X0808T1D-LQ85
1)
Function
28-SOP, 70ns, LL
28-SOP, 85ns, LL
28-SOP, 70ns, LL, LF
28-SOP, 85ns, LL, LF
28-sTSOP-F, 70ns, LL
28-sTSOP-F, 85ns, LL
28-sTSOP-F, 70ns, LL, LF
28-sTSOP-F, 85ns, LL, LF
28-sTSOP-R, 70ns, LL
28-sTSOP-R, 85ns, LL
Function
28-SOP, 70ns, LL
28-SOP, 85ns, LL
28-SOP, 70ns, LL, LF
28-SOP, 85ns, LL, LF
28-sTSOP-F, 70ns, LL
28-sTSOP-F, 85ns, LL
28-sTSOP-F, 70ns, LL, LF
28-sTSOP-F, 85ns, LL, LF
28-sTSOP-R, 70ns, LL
28-sTSOP-R, 85ns, LL
Function
28-SOP, 70ns, L
28-SOP, 85ns, L
28-SOP, 70ns, L, LF
28-SOP, 85ns, L, LF
28-sTSOP-F, 70ns, L
28-sTSOP-F, 85ns, L
28-sTSOP-F, 70ns, L, LF
28-sTSOP-F, 85ns, L, LF
1.Lead Free Products (LF)
FUNCTIONAL DESCRIPTION
CS
H
L
L
L
OE
X
1)
H
L
X
1)
WE
X
1)
H
H
L
I/O
High-Z
High-Z
Dout
Din
Mode
Deselected
Output Disabled
Read
Write
Power
Standby
Active
Active
Active
1. X means don't care (Must be in high or low states)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
V
IN
,V
OUT
V
CC
P
D
T
STG
T
A
Ratings
-0.2 to V
CC
+0.3V(Max. 3.9V)
-0.2 to 3.9
1.0
-65 to 150
-40 to 85
-40 to 125
Unit
V
V
W
°C
°C
°C
Remark
-
-
-
-
K6X0808T1D-F
K6X0808T1D-Q
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 2.0
March 2005
K6X0808T1D Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
V
IH
V
IL
Min
2.7
0
2.2
-0.2
3)
Typ
3.0/3.3
0
-
-
CMOS SRAM
Max
3.6
0
Vcc+0.2
2)
0.6
Unit
V
V
V
V
Note:
1. Industrial Product: T
A
=-40 to 85°C, Otherwise specified
A
utomotive Product: T
A
=-40 to 125°C, Otherwise specified
2. Overshoot: Vcc+3.0V in case of pulse width≤30ns.
3. Undershoot: -3.0V in case of pulse width≤30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1
)
(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply current
Symbol
I
LI
I
LO
I
CC
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
V
OL
V
OH
I
SB
I
SB1
V
IN
=Vss to Vcc
CS=V
IH
or OE=V
IH
or WE=V
IL
, V
IO
=V
SS
to Vcc
I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
, Read
Cycle time=1µs, 100% duty, I
IO
=0mA, CS≤0.2V,
V
IN
≤0.2V
IN
≥Vcc
-0.2V
Cycle time=Min,100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
I
OL
=2.1mA
I
OH
=-1.0mA
CS=V
IH
, Other inputs=V
IH
or V
IL
CS≥Vcc-0.2V, Other inputs=0~Vcc
K6X0808T1D-F
K6X0808T1D-Q
Test Conditions
Min Typ Max Unit
-1
-1
-
-
-
-
2.4
-
-
-
-
-
-
-
-
-
-
-
-
-
1
1
2
3
20
0.4
-
0.3
6
25
µA
µA
mA
mA
mA
V
V
mA
µA
µA
4
Revision 2.0
March 2005
K6X0808T1D Family
AC OPERATING CONDITIONS
TEST CONDITIONS
( Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage:1.5V
Output load(see right): C
L
=100pF+1TTL
C
L
=30pF+1TTL
C
L
1)
CMOS SRAM
1. Including scope and jig capacitance
AC CHARACTERISTICS
(V
CC
=2.7~3.6V, Industrial product:T
A
=-40 to 85°C, Automotive product:T
A
=-40 to 125°C
)
Speed Bins
Parameter List
Symbol
Min
70ns
Max
-
70
70
35
-
-
25
25
-
-
-
-
-
-
-
25
-
-
-
Min
85
-
-
-
10
5
0
0
15
85
70
0
70
60
0
0
35
0
5
85ns
Max
-
85
85
40
-
-
25
25
-
-
-
-
-
-
-
30
-
-
-
Units
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Read
Chip Select to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
t
RC
t
AA
t
CO
t
OE
t
LZ
t
OLZ
t
HZ
t
OHZ
t
OH
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
70
-
-
-
10
5
0
0
10
70
60
0
60
50
0
0
25
0
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Symbol
V
DR
I
DR
t
SDR
t
RDR
CS
1
≥Vcc-0.2V
Vcc=3.0V, CS
1
≥Vcc-0.2V
K6X0808T1D-F
K6X0808T1D-Q
See data retention waveform
0
5
-
-
Test Condition
Min
2.0
-
Typ
-
-
Max
3.6
6
25
-
-
Unit
V
µA
µA
ms
5
Revision 2.0
March 2005
Microcontroller MCU
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