-100mA / -50V Digital transistors
(with built-in resistors)
DTA114EUB
Applications
Inverter, Interface, Driver
Dimensions
(Unit : mm)
UMT3F
2.0
Features
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for
operation, making the device design easy.
2.1
1.25 0.425
0.32
(3)
0.9
0.53
Each lead has same dimensions
0.425
(1)
(2)
0.13
0.65 0.65
1.3
(1) IN
(2) GND
(3) OUT
Abbreviated symbol : 14
Structure
PNP silicon epitaxial planar transistor type
(Resistor built-in)
Inner circuit
R
1
IN
R
2
OUT
Packaging specifications
Package
Packaging type
Code
Part No.
DTA114EUB
UMT3F
GND(+)
Taping
TL
3000
IN
GND(+)
OUT
Basic ordering unit (pieces)
R
1
=R
2
=10kΩ
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
Limits
−50
−40
to
+10
−100
−50
200
150
−55
to
+150
Unit
V
V
mA
mA
mW
°C
°C
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
V
CC
V
IN
Ic(max)
∗1
Io
P
D
∗2
Tj
Tstg
∗1
Characteristics of built-in transistor
∗2
Each terminal mounted on a recommended land
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2009 ROHM Co., Ltd. All rights reserved.
0.53
1/2
2009.07 - Rev.B
DTA114EUB
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗
Characteristics of built-in transistor
Data Sheet
Symbol Min.
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
∗
R
1
R
2
/R
1
−
−3.0
−
−
−
30
−
7
0.8
Typ.
−
−
−
−
−
250
10
1.0
Max.
−0.5
−
−880
−500
−
−
13
1.2
Unit
V
mV
µA
nA
−
MHz
kΩ
−
Conditions
V
CC
=−5V,
I
O
=−100µA
V
O
=−0.3V,
I
O
=−10mA
I
O
=−10mA,
I
I
=−0.5mA
V
I
=−5V
V
CC
=−50V,
V
I
=0V
V
O
=−5V,
I
O
=−5mA
V
CE
=−10V,
I
E
=5mA,
f=100MHz
−
−
−100 −300
Electrical characteristic curves
−100
−50
INPUT VOLTAGE : V
I(on)
(V)
V
O
=−0.3V
OUTPUT CURRENT : Io
(A)
−10m
−5m
−2m
−1m
−500µ
−200µ
−100µ
−50µ
−20µ
−10µ
−5µ
−2µ
−1µ
0
V
CC
=−5V
Ta=100°C
25°C
−40°C
1k
500
DC CURRENT GAIN : G
I
V
O
=−5V
Ta=100°C
25°C
−40°C
−20
−10
−5
−2
−1
−500m
−200m
−100m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
Ta=−40°C
25°C
100°C
200
100
50
20
10
5
2
−0.5
−1.0
−1.5
−2.0
−2.5
−3.0
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I(off)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
−1
−500m
OUTPUT VOLTAGE : V
O(on)
(V)
l
O
/l
I
=20
Ta=100°C
25°C
−40°C
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : I
O
(A)
Fig.4 Output voltage vs. output current
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2009 ROHM Co., Ltd. All rights reserved.
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2009.07 - Rev.B
Notice
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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