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IRHMS53064

Description
Power Field-Effect Transistor, 45A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size167KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

IRHMS53064 Overview

Power Field-Effect Transistor, 45A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN

IRHMS53064 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
package instructionTO-254AA, 3 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)824 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)45 A
Maximum drain current (ID)45 A
Maximum drain-source on-resistance0.0076 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-XSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)208 W
Maximum pulsed drain current (IDM)180 A
Certification statusNot Qualified
GuidelineRH - 300K Rad(Si)
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)120 ns
Maximum opening time (tons)160 ns
PD-95838C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHMS57064 100K Rads (Si) 0.0066Ω 45A*
IRHMS53064 300K Rads (Si) 0.0066Ω 45A*
IRHMS54064
500K Rads (Si)
0.0066Ω 45A*
IRHMS58064 1000K Rads (Si)
IRHMS57064
JANSR2N7470T1
60V, N-CHANNEL
REF: MIL-PRF-19500/698
5

TECHNOLOGY
™
QPL Part Number
JANSR2N7470T1
JANSF2N7470T1
JANSG2N7470T1
0.0066Ω 45A* JANSH2N7470T1
Low-Ohmic
TO-254AA
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
45*
45*
180
208
1.67
±20
824
45
20
4.3
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
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