PD-95838B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHMS57064 100K Rads (Si) 0.0066Ω 45A*
IRHMS53064 300K Rads (Si) 0.0066Ω 45A*
IRHMS54064
500K Rads (Si)
0.0066Ω 45A*
IRHMS58064 1000K Rads (Si)
IRHMS57064
JANSR2N7470T1
60V, N-CHANNEL
REF: MIL-PRF-19500/698
5
TECHNOLOGY
QPL Part Number
JANSR2N7470T1
JANSF2N7470T1
JANSG2N7470T1
0.0066Ω 45A* JANSH2N7470T1
Low-Ohmic
TO-254AA
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
45*
45*
180
208
1.67
±20
824
45
20
4.3
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
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1
07/24/06
IRHMS57064, JANSR2N7470T1
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
—
—
2.0
42
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.067
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.0066
4.0
—
10
25
100
-100
150
75
50
35
125
60
50
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 45A
Ã
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 45A
Ã
VDS = 48V ,VGS = 0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 45A
VDS = 30V
VDD = 30V, ID = 45A
VGS =12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
5640
2410
105
1.04
—
—
—
—
pF
Ω
VGS = 0V, VDS = 25V
f = 100KHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
45*
180
1.2
170
760
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 45A, VGS = 0V
Ã
Tj = 25°C, IF = 45A, di/dt
≤
100A/µs
VDD
≤
50V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.60
0.21 —
—
48
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHMS57064, JANSR2N7470T1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Static Drain-to-Source On-State
Ã
Resistance (Low-Ohmic TO-254)
Diode Forward Voltage
Ã
Up to 500K Rads(Si)
1
1000K Rads (Si)
2
Units
Min
Max
Min
Max
60
2.0
—
—
—
—
—
—
—
4.0
100
-100
10
0.0061
0.0066
1.2
60
1.5
—
—
—
—
—
—
—
4.0
100
-100
25
0.0071
0.0070
1.2
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
= 48V, V
GS
=0V
V
GS
=12V, I
D
=45A
V
GS
= 12V, I
D
=45A
V
GS
= 0V, IS = 45A
1. Part numbers IRHMS57064 (JANSR2N7470T1), IRHMS53064 (JANSF2N7470T1) and IRHMS54064 (JANSG2N7470T1)
2. Part number IRHMS58064 (JANSH2N7470T1)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
Xe
Au
LET
(MeV/(mg/cm
2
))
37.3
63
86.6
Energy
(MeV)
285
300
2068
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
= -5V @V
GS
= -10V @V
GS
=-15V @V
GS
=-20V
36.8
60
60
60
60
40
29
46
46
35
25
15
106
35
35
27
20
14
70
60
50
40
30
20
10
0
0
-5
-10
VGS
-15
-20
VDS
Br
I
Au
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMS57064, JANSR2N7470T1
Pre-Irradiation
1000
VGS
TOP
15V
12V
10V
7.0V
6.0V
5.0V
4.5V
BOTTOM 4.0V
1000
VGS
15V
12V
10V
7.0V
6.0V
5.0V
4.5V
BOTTOM 4.0V
TOP
ID, Drain-to-Source Current (A)
100
10
ID, Drain-to-Source Current (A)
100
10
4.0V
60
µ
s PULSE WIDTH
Tj = 150°C
1
4.0V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
ID, Drain-to-Source Current (A)
100
T J = 150°C
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 45A
1.5
T J = 25°C
10
1.0
1
VDS = 25V
15
60µs PULSE WIDTH
4
4.5
5
5.5
6
6.5
7
0.5
VGS = 12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHMS57064, JANSR2N7470T1
14000
12000
10000
8000
6000
4000
2000
0
1
VGS, Gate-to-Source Voltage (V)
100KHz
VGS = 0V,
f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
20
ID = 45A
16
Coss = Cds + Cgd
VDS= 48V
VDS= 30V
VDS= 12V
C, Capacitance (pF)
12
Ciss
Coss
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80
100 120 140 160
Crss
10
100
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µs
1ms
10
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
1
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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Discrete Device
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