D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
DS14C88 Quad CMOS Line Driver
May 1998
DS14C88
Quad CMOS Line Driver
General Description
The DS14C88, pin-for-pin compatible to the DS1488/
MC1488, is a quad line drivers designed to interface data
terminal equipment (DTE) with data circuit-terminating
equipment (DCE). This device translates standard TTL/
CMOS logic levels to levels conforming to EIA-232-D and
CCITT V.28 standards.
The device is fabricated in low threshold CMOS metal gate
technology. The device provides very low power consump-
tion compared to its bipolar equivalents: 500 µA (DS14C88)
versus 25 mA (DS1488).
The DS14C88 simplifies designs by eliminating the need for
external slew rate control capacitors. Slew rate control in
accordance with EIA-232D is provided on-chip, eliminating
the output capacitors.
Features
n
n
n
n
Meets EIA-232D and CCITT V.28 standards
LOW power consumption
Wide power supply range:
±
5V to
±
12V
Available in SOIC package
Connection Diagram
01110501
Order Number DS14C88N, or DS14C88M
See NS Package Number N14A or M14A
© 2004 National Semiconductor Corporation
DS011105
www.national.com
DS14C88
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
V
+
Pin
V
−
Pin
Driver Input Voltage
Driver Output Voltage
+
Lead Temperature
(Soldering 4 seconds)
Storage Temperature
Range
+260˚C
−65˚C to +150˚C
+13V
−13V
(V ) +0.3V to GND
−0.3V
|(V
+
) − V
O
|
≤
30V
|(V
−
) − V
O
|
≤
30V
This Product does not meet 2000V ESD rating.
(Note 9)
Recommended Operating
Conditions
Min
V Supply (GND = 0V)
V
−
Supply (GND = 0V)
Operating Free Air Temp.
(T
A
)
DS14C88
0
+75
˚C
+
Max Units
V
V
+4.5 +12.6
−4.5 −12.6
Continuous Power Dissipation
@
+25˚C (Note 2)
N Package
M Package
Junction Temperature
1513 mW
1063 mW
+150˚C
Electrical Characteristics
Over Recommended Operating Conditions, unless otherwise specified
Symbol
I
IL
I
IH
V
IL
V
IH
V
OL
Parameter
Maximum Low Input
Current
Maximum High Input
Current
Low Level Input Voltage
High Level Input Voltage
Low Level Output Level
V
IN
= V
IH
R
L
= 3 kΩ
or 7 kΩ
V
OH
High Level Output Level
V
IN
= V
IL
R
L
= 3 kΩ
or 7 kΩ
I
OS+
I
OS−
R
OUT
I
CC+
High Level Output Short
Circuit Current (Note 3)
Low Level Output Short
Circuit Current (Note 3)
Output Resistance
Positive Supply Current
V
+
= V
−
= GND = 0V
−2V
≤
V
O
≤
+2V (Note 4) (Figure
1
)
V
IN
= V
ILmax
R
L
= OPEN
V
IN
= V
IHmin
R
L
= OPEN
I
CC-
Negative Supply Current
V
IN
= V
ILmax
R
L
= OPEN
V
IN
= V
IHmin
R
L
= OPEN
V
+
= 4.5V, V
−
= −4.5V
V
+
= 9V, V
−
= −9V
V = 12V, V = −12V
V
+
= 4.5V, V
−
= −4.5V
V = 9V, V = −9V
V = 12V, V = −12V
V
+
= 4.5V, V
−
= −4.5V
V = 9V, V = −9V
V
+
= 12V, V
−
= −12V
V = 4.5V, V = −4.5V
V
+
= 9V, V
−
= −9V
V = 12V, V = −12V
+
−
+
−
+
−
+
−
+
−
+
−
Conditions
V
IN
= GND
V
IN
= V
+
V
+
≥
+7V, V
−
≤
−7V
V
<
+7V, V
>
−7V
+
−
Min
Typ
Max
+10
Units
µA
µA
−10
GND
GND
2.0
V = 4.5V, V = −4.5V
V
+
= 9V, V
−
= 9V
V = 12V, V = −12V
V
+
= 4.5V, V
−
= −4.5V
V = 9V, V = −9V
V = 12V, V = −12V
V
+
= +12V,
V = −12V
−
+
−
+
−
+
−
+
−
0.8
0.6
V
+
−4.0
−8.0
−10.5
−3.0
−6.5
−9.0
V
V
V
V
V
V
V
V
V
mA
3.0
6.5
9.0
−45
4.0
8.0
10.5
V
IN
= 0.8V, V
O
= GND
V
IN
= 2.0V, V
O
= GND
+45
300
10
30
60
50
300
500
−10
−10
−10
−30
−30
−60
mA
Ω
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
www.national.com
2
DS14C88
Switching Characteristics
(Notes 5, 6)
Over Recommended Operating Conditions, unless otheriwse specified (Figures
2, 3)
Symbol
t
PLH
Parameter
Propagation Delay
Low to High
t
PHL
Propagation Delay
High to Low
t
r
t
f
tsk
Rise Time (Note 7)
Fall Time (Note 7)
Typical Propagation
Delay Skew
S
R
Output Slew Rate
(Note 7)
V
+
= +4.5V, V
−
= −4.5V
V = +9.0V, V = −9.0V
V = +12V, V = −12V
R
L
= 3 kΩ to 7 kΩ
C
L
= 15 pF to 2500 pF
+
−
+
−
+
Conditions
V = +4.5V, V = −4.5V
V
+
= +9.0V, V
−
= −9.0V
V = +12V, V = −12V
V = +4.5V, V = −4.5V
V
+
= +9.0V, V
−
= −9.0V
V = +12V, V = −12V
+
−
+
−
+
−
−
Min
Typ
1.5
1.2
1.2
1.5
1.35
1.3
Max
6.0
5.0
4.0
6.0
5.0
4.0
Units
µs
µs
µs
µs
µs
µs
µs
µs
ns
ns
ns
0.2
0.2
1.0
1.0
250
200
150
30
V/µs
Note 1:
“Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.
Note 2:
Derate N Package 12.1 mW/˚C, and M Package 8.5 mW/˚C above +25˚C.
Note 3:
I
OS+
and I
OS−
values are for one output at a time. If more than one output is shorted simultaneously, the device dissipation may be exceeded.
Note 4:
Power supply (V
+
, V
−
) and GND pins are connected to ground for the Output Resistance Test (R
O
).
Note 5:
AC input test waveforms for test purposes: t
r
= t
f
≤
20 ns, V
IH
= 2V, V
IL
= 0.8V (0.6V at V
+
= 4.5V, V
−
= −4.5V)
Note 6:
Input rise and rall times must not exceed 5 µs.
Note 7:
The output slew rate, rise time, and fall time are measured from the +3.0V to the −3.0V level on the output waveform.
Note 8:
C
L
include jig and probe capacitances.
Note 9:
ESD Rating (HBM, 1.5 kΩ, 100 pF)
≥
1.0 kV.
Parameter Measure Information
01110502
FIGURE 1. Output Resistance Test Circuit (Power-Off)
01110503
FIGURE 2. Driver Load Circuit
(Note 8)
3
www.national.com
DS14C88
Parameter Measure Information
(Continued)
01110504
FIGURE 3. Driver Switching Waveform
Typical Application Information
01110505
FIGURE 4. EIA-232D Data Transmission
www.national.com
4