PT9703B datasheet, PDF - EEWORLD Datasheet

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PT9703B: DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size335KB，7 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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PT9703B Overview

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN

PT9703B Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	DIFFUSED BALLAST RESISTORS
Maximum collector current (IC)	1.25 A
Collector-based maximum capacity	12 pF
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-CRPM-F4
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	20 W
Minimum power gain (Gp)	8.2 dB
Certification status	Not Qualified
surface mount	NO
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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PT9703B Related Products

	PT9703B	PT9704B	PT9701B
Description	RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN	RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.75A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
package instruction	POST/STUD MOUNT, O-CRPM-F4	POST/STUD MOUNT, O-CRPM-F4	POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Other features	DIFFUSED BALLAST RESISTORS	DIFFUSED BALLAST RESISTORS	DIFFUSED BALLAST RESISTORS
Maximum collector current (IC)	1.25 A	5 A	0.75 A
Collector-based maximum capacity	12 pF	36 pF	6 pF
Collector-emitter maximum voltage	30 V	30 V	30 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	10	10
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-CRPM-F4	O-CRPM-F4	O-CRPM-F4
Number of components	1	1	1
Number of terminals	4	4	4
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
Polarity/channel type	NPN	NPN	NPN
Maximum power consumption environment	20 W	70 W	10 W
Minimum power gain (Gp)	8.2 dB	7 dB	9 dB
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	FLAT	FLAT	FLAT
Terminal location	RADIAL	RADIAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON

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