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KSC5504DTM

Description
Power Bipolar Transistor, 4A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin, D2PAK-3
CategoryDiscrete semiconductor    The transistor   
File Size103KB,10 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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KSC5504DTM Overview

Power Bipolar Transistor, 4A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin, D2PAK-3

KSC5504DTM Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeD2PAK
package instructionD2PAK-3
Contacts3
Reach Compliance Codenot_compliant
Maximum collector current (IC)4 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)4
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)75 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)11 MHz
KSC5504D/KSC5504DT
KSC5504D/KSC5504DT
D2-PAK
High Voltage High Speed Power Switch
Application
Wide Safe Operating Area
Built-in Free-Wheeling Diode
Suitable for Electronic Ballast Application
Small Variance in Storage Time
Two Package Choices : D2-PAK or TO-220
B
Equivalent Circuit
C
1
TO-220
E
1
1.Base
2.Collector
3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
E
AS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Avalanche Energy(T
j
=25°C)
Parameter
Value
1200
600
12
4
8
2
4
75
150
- 65 ~ 150
3
Units
V
V
V
A
A
A
A
W
°C
°C
mJ
* Pulse Test : Pulse Width = 5ms, Duty Cycle
10%
Thermal Characteristics
T
C
=25°C unless otherwise noted
Symbol
R
θjc
R
θja
T
L
Thermal Resistance
Characteristics
Junction to Case
Junction to Ambient
Maximun Lead Temperature for Soldering Purpose
: 1/8” from Case for 5 seconds
Rating
1.65
62.5
270
°C
Unit
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001

KSC5504DTM Related Products

KSC5504DTM KSC5504DTTU
Description Power Bipolar Transistor, 4A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin, D2PAK-3 Power Bipolar Transistor, 4A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Is it Rohs certified? conform to conform to
Maker Fairchild Fairchild
Parts packaging code D2PAK TO-220AB
package instruction D2PAK-3 TO-220, 3 PIN
Contacts 3 3
Reach Compliance Code not_compliant unknown
Maximum collector current (IC) 4 A 4 A
Collector-emitter maximum voltage 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE) 4 4
JEDEC-95 code TO-263AB TO-220AB
JESD-30 code R-PSSO-G2 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 2 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 75 W 75 W
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 11 MHz 11 MHz
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