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KSH44H11-1

Description
TRANSISTOR,BJT,NPN,80V V(BR)CEO,8A I(C),TO-251AA
CategoryDiscrete semiconductor    The transistor   
File Size42KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

KSH44H11-1 Overview

TRANSISTOR,BJT,NPN,80V V(BR)CEO,8A I(C),TO-251AA

KSH44H11-1 Parametric

Parameter NameAttribute value
MakerFairchild
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)8 A
ConfigurationSingle
Minimum DC current gain (hFE)40
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)20 W
surface mountNO
KSH44H11
KSH44H11
General Purpose Power and Switching Such
as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
Lead Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular KSE44H
Fast Switching Speeds
Low Collector Emitter Saturation Voltage
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector-Current (Pulse)
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
80
5
8
16
20
1.75
150
- 65 ~ 150
Units
V
V
A
A
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= 30mA, I
B
= 0
V
CE
= 80V, I
B
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 1V, I
C
= 2A
V
CE
= 1V, I
C
= 4A
I
C
= 8A, I
B
= 0.4A
I
C
= 8A, I
B
= 0.8A
V
CE
= 10V, I
C
= 0.5A
V
CB
=10V, f = 1MHz
I
C
= 5A
I
B1
= - I
B2
= 0.5A
50
130
300
500
140
60
40
1
1.5
V
V
MHz
pF
ns
ns
ns
Min.
80
Typ.
Max.
10
50
Units
V
µA
µA
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A3, October 2002
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