www.fairchildsemi.com
KA5Q-SERIES
KA5Q0765RT/KA5Q12656RT/KA5Q1265RF/
KA5Q1565RF
Fairchild Power Switch(FPS)
Features
•
•
•
•
•
•
•
•
•
Quasi Resonant Converter Controller
Internal Burst mode Controller for Stand-by mode
Pulse by pulse current limiting
Over current Latch protection
Over voltage protection (Vsync: Min. 11V)
Internal thermal shutdown function
Under voltage lockout
Internal high voltage sense FET
Auto-restart mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM contorller IC.
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver, thermal shut down protection, over voltage
protection, temperature compensated precision current sources
for loop compensation and fault protection circuit. compared to
discrete MOSFET and controller or R
CC
switching converter
solution, a Fairchild Power Switch(FPS) can reduce total
component count, design size, and weight and at the same time
increase & efficiency, productivity, and system reliability. It has
a basic platform well suited for cost-effective design in
quasi resonant converter as C-TV power supply.
TO-220F-5L
TO-3PF-5L
1
1
1. Drain 2. GND 3. V
CC
4. FB 5. Sync
Internal Block Diagram
3
+
PSR
REF.
Sync.
REF.
Burst mode
controller
Internal
Bias
Vref
+
UVLO
1
5
OSC
+
S
R
_
Q
Ron
OVP
LEB
Roff
PWM
R
+
Vfb offset
Ids
+
Vds
REF.
TSD
150
o
C
Power-on
Reset
Vz
Rsense
4
1.7R
Ifb
S
Q
R
Delay
500nS
+
OCL
REF.
2
Rev.1.0.2
©2001 Fairchild Semiconductor Corporation
KA5Q-SERIES KA5Q0765RT/KA5Q12656RT/KA5Q1265RF/KA5Q1565RF
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
Symbol
BV
PKG
V
D,MAX
V
DGR
V
GS
I
DM
I
D
I
D
I
AS
(E
AS
)
V
CC,MAX
V
FB
V
Sync
P
D
Derating
T
J
T
A
T
STG
Value
3500
650
650
±30
28
7.0
5.6
20(570)
40
-0.3 to V
CC
-0.3 to 13
47
1.1
+160
-25 to +85
-55 to +150
Unit
V
V
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W /
°C
°C
°C
°C
KA5Q0765RT
Drain to PKG Breakdown Voltage
Maximum Drain Voltage
Drain-Gate Voltage(R
GS
=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current
(3)
(Energy
(2)
)
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
KA5Q12656RT
Drain to PKG Breakdown Voltage
Maximum Drain Voltage
Drain-Gate Voltage(R
GS
=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(Energy
(2)
)
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
BV
PKG
V
D,MAX
V
DGR
V
GS
I
DM
I
D
I
D
I
AS
(E
AS
)
V
CC,MAX
V
FB
V
Sync
P
D
Derating
T
J
T
A
T
STG
3500
650
650
±30
48
12
8.4
30(950)
40
-0.3 to V
CC
-0.3 to13
55
1.1
+160
-25 to +85
-55 to +150
V
V
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W /
°C
°C
°C
°C
2
KA5Q-SERIES KA5Q0765RT/KA5Q12656RT/KA5Q1265RF/
Absolute Maximum Ratings (Continued)
(Ta=25°C, unless otherwise specified)
°
Characteristic
Symbol
BV
PKG
V
D,MAX
V
DGR
V
GS
I
DM
I
D
I
D
I
AS
(E
AS
)
V
CC,MAX
V
FB
V
Sync
P
D
Derating
T
J
T
A
T
STG
Value
3500
650
650
±30
48
12
8.4
33(950)
40
-0.3 to V
CC
-0.3 to 13
240
1.92
+160
-25 to +85
-55 to +150
Unit
V
V
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W /
°C
°C
°C
°C
KA5Q1265RF
Drain to PKG Breakdown Voltage
Maximum Drain Voltage
Drain-Gate Voltage(R
GS
=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(Energy
(2)
)
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
KA5Q1565RF
Drain to PKG Breakdown Voltage
Maximum Drain Voltage
Drain-Gate Voltage(R
GS
=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(Energy
(2)
)
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
BV
PKG
V
D,MAX
V
DGR
V
GS
I
DM
I
D
I
D
I
AS
(E
AS
)
V
CC,MAX
V
FB
V
Sync
P
D
Derating
T
J
T
A
T
STG
3500
650
650
±30
60
15
12.0
36(1050)
40
-0.3 to V
CC
-0.3 to 13
280
2.22
+160
-25 to +85
-55 to +150
V
V
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W /
°C
°C
°C
°C
Note:
1. Repetitive rating : Pulse width limited by maximum junction temperature
2. L = 10mH, V
DD
=50V, R
G
= 27Ω, starting Tj = 25°C
3. L = 13uH, starting Tj = 25°C
3
KA5Q-SERIES KA5Q0765RT/KA5Q12656RT/KA5Q1265RF/KA5Q1565RF
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
BV
DSS
I
DSS
R
DS
(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DD
=0.5BV
DSS
, I
D
=7.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=7.0A,
V
DS
=0.5BV
DSS
(MOSFET
Switching time are
Essentially independent of
Operating temperature)
V
GS
=0V, V
DS
=25V,
f = 1MHz
Conditions
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating, V
GS
=0V
Zero gate voltage drain current
Static drain-source on resistance
(1)
Forward transconductance
(1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=85°C
V
GS
=10V, I
D
=4.0A
V
DS
=15V, I
D
=4.0A
Min.
650
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
1.3
-
1110
105
50
25
55
80
50
-
9.3
29.3
Max.
-
200
300
1.6
-
-
-
-
-
-
-
-
57
-
-
nC
nS
pF
Unit
V
µA
µA
Ω
S
KA5Q0765RT
Drain-source breakdown voltage
KA5Q12656RT/KA5Q1265RF
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source On Resistance
(1)
Forward transconductance
(1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
BV
DSS
I
DSS
R
DS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DD
=0.5BV
DSS
, I
D
=12.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=12.0A,
V
DS
=0.5BV
DSS
(MOSFET
Switching time are
Essentially independent of
Operating temperature)
V
GS
=0V, V
DS
=25V,
f = 1MHz
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating, V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=85°C
V
GS
=10V, I
D
=6A
V
DS
=50V, I
D
=6A
650
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.7
-
1820
185
32
38
120
200
100
60
10
30
-
200
300
0.9
-
-
-
-
-
-
-
-
-
-
-
nC
nS
pF
V
µA
µA
Ω
S
4
KA5Q-SERIES KA5Q0765RT/KA5Q12656RT/KA5Q1265RF/
Absolute Maximum Ratings (SFET PART)
(Ta=25°C, unless otherwise specified)
Characteristic
Symbol
BV
DSS
I
DSS
R
DS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test condition
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating,
V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=85°C
V
GS
=10V, I
D
=7.3A
V
DS
=50V, I
D
=7.3A
V
GS
=0V, V
DS
=25V,
f=1MHz
V
DD
=0.5BV
DSS
, I
D
=14.6A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=14.6A,
V
DS
=0.8BV
DSS
(MOSFET
switching time are
essentially independent of
operating temperature)
Min.
650
-
-
-
14
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.5
-
2580
270
50
50
155
270
125
-
15
45
Max.
-
200
300
0.65
-
-
-
-
-
-
-
-
90
-
-
nC
Unit
V
µA
mA
W
S
pF
KA5Q1565RF
Drain-source breakdown voltage
Zero gate voltage drain current
Static drain-source on resistance
(note)
Forward transconductance
(note)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
Note:
Pulse test: Pulse width
≤
300µS, duty cycle
≤
2%
1
S
= ---
-
R
nS
5
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