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BCX58-9

Description
TRANSISTOR 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size30KB,1 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
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BCX58-9 Overview

TRANSISTOR 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal

BCX58-9 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNational Semiconductor(TI )
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)125 MHz

BCX58-9 Related Products

BCX58-9 BCX58-8 BCX58-10 BC560A BCX59-7 BCX59-8 BCX59-9 BCX58-7
Description TRANSISTOR 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal TRANSISTOR,BJT,NPN,32V V(BR)CEO,100MA I(C),TO-92 TRANSISTOR,BJT,NPN,32V V(BR)CEO,100MA I(C),TO-92 TRANSISTOR,BJT,PNP,45V V(BR)CEO,100MA I(C),TO-92 TRANSISTOR,BJT,NPN,45V V(BR)CEO,100MA I(C),TO-92 TRANSISTOR,BJT,NPN,45V V(BR)CEO,100MA I(C),TO-92 TRANSISTOR 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal TRANSISTOR,BJT,NPN,32V V(BR)CEO,100MA I(C),TO-92
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code unknown compliant compliant compliant unknown compliant unknown compliant
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Configuration SINGLE Single Single Single Single Single SINGLE Single
Minimum DC current gain (hFE) 120 120 240 125 80 120 120 80
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN PNP NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.625 W 0.625 W 0.625 W 0.5 W 0.625 W 0.625 W 0.625 W 0.625 W
surface mount NO NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 125 MHz 125 MHz 125 MHz 150 MHz 125 MHz 125 MHz 125 MHz 125 MHz
Maker National Semiconductor(TI ) - - National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI )

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