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MX30KP51C

Description
Trans Voltage Suppressor Diode, 30000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size2MB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

MX30KP51C Overview

Trans Voltage Suppressor Diode, 30000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2

MX30KP51C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionPLASTIC PACKAGE-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum breakdown voltage69.3 V
Minimum breakdown voltage56.7 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation30000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation1.61 W
Certification statusNot Qualified
GuidelineMIL-19500
Maximum repetitive peak reverse voltage51 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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