HN58V256ATI-12 datasheet, PDF - EEWORLD Datasheet

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HN58V256ATI-12: DescriptionEEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO28, PLASTIC, TSOP-28; Categorystorage storage; File Size113KB，20 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HN58V256ATI-12 Overview

EEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO28, PLASTIC, TSOP-28

HN58V256ATI-12 Parametric

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
Parts packaging code	TSOP
package instruction	TSOP1, TSSOP28,.53,22
Contacts	28
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	120 ns
command user interface	NO
Data polling	YES
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G28
length	11.8 mm
memory density	262144 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	32KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP28,.53,22
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
page size	64 words
Parallel/Serial	PARALLEL
power supply	3/5 V
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.00002 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.55 mm
Terminal location	DUAL
switch bit	YES
width	8 mm
Maximum write cycle time (tWC)	10 ms

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HN58V256AI Series

256k EEPROM (32-kword

8-bit)

Wide Temperature Range version

ADE-203-616C (Z)

Rev. 3.0

Oct. 24, 1997

Description

The Hitachi HN58V256A is electrically erasable and programmable ROM organized as 32768-word

8-bit.

It has realized high speed low power consumption and high reliability by employing advanced MNOS

memory technology and CMOS process and circuitry technology. They also have a 64-byte page

programming function to make their write operations faster.

Features

•

Single 3 V supply: 2.7 to 5.5

•

Access time: 120 ns max

•

Power dissipation:



Active: 20 mW/MHz, (typ)



Standby: 110

µW

(max)

•

On-chip latches: address, data,

CE, OE, WE

•

Automatic byte write: 10 ms max

•

Automatic page write (64 bytes): 10 ms max

•

Data

polling and Toggle bit

•

Data protection circuit on power on/off

•

Conforms to JEDEC byte-wide standard

•

Reliable CMOS with MNOS cell technology

•

erase/write cycles (in page mode)

•

10 years data retention

•

Software data protection

•

Operating temperature range: –40 to 85˚C

HN58V256ATI-12 Related Products

	HN58V256ATI-12	HN58V256AFPI-12
Description	EEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO28, PLASTIC, TSOP-28	EEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO28, 0.400 INCH, PLASTIC, SO-28
Maker	Hitachi （Renesas ）	Hitachi （Renesas ）
Parts packaging code	TSOP	SOIC
package instruction	TSOP1, TSSOP28,.53,22	SOP, SOP28,.4
Contacts	28	28
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum access time	120 ns	120 ns
command user interface	NO	NO
Data polling	YES	YES
Durability	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G28	R-PDSO-G28
length	11.8 mm	18.3 mm
memory density	262144 bit	262144 bit
Memory IC Type	EEPROM	EEPROM
memory width	8	8
Number of functions	1	1
Number of terminals	28	28
word count	32768 words	32768 words
character code	32000	32000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C
organize	32KX8	32KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	SOP
Encapsulate equivalent code	TSSOP28,.53,22	SOP28,.4
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE
page size	64 words	64 words
Parallel/Serial	PARALLEL	PARALLEL
power supply	3/5 V	3/5 V
Programming voltage	3 V	3 V
Certification status	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	2.5 mm
Maximum standby current	0.00002 A	0.00002 A
Maximum slew rate	0.03 mA	0.03 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	3 V
surface mount	YES	YES
technology	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL
Terminal form	GULL WING	GULL WING
Terminal pitch	0.55 mm	1.27 mm
Terminal location	DUAL	DUAL
switch bit	YES	YES
width	8 mm	8.4 mm
Maximum write cycle time (tWC)	10 ms	10 ms

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