PDM41096S25SO datasheet, PDF - EEWORLD Datasheet

PDM41096S25SO: DescriptionStandard SRAM, 512KX8, 25ns, CMOS, PDSO36; Categorystorage storage; File Size187KB，8 Pages; ManufacturerParadigm Technology Inc

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PDM41096S25SO Overview

Standard SRAM, 512KX8, 25ns, CMOS, PDSO36

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Paradigm Technology Inc
package instruction	SOJ, SOJ36,.44
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	25 ns
I/O type	COMMON
JESD-30 code	R-PDSO-J36
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	36
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ36,.44
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.04 A
Minimum standby current	4.5 V
Maximum slew rate	0.22 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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