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6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)
MOC3031M
DESCRIPTION
The MOC303XM and MOC304XM devices consist of a AlGaAs
infrared emitting diode optically coupled to a monolithic silicon
detector performing the function of a zero voltage crossing bilat-
eral triac driver.
They are designed for use with a triac in the interface of logic
systems to equipment powered from 115 VAC lines, such as
teletypewriters, CRTs, solid-state relays, industrial controls,
printers, motors, solenoids and consumer appliances, etc.
6
6
1
1
MOC3032M
MOC3033M
MOC3041M
MOC3042M
MOC3043M
FEATURES
•
•
•
•
Simplifies logic control of 115 VAC power
Zero voltage crossing
dv/dt of 2000 V/µs typical, 1000 V/µs guaranteed
VDE recognized (File # 94766)
-ordering option V (e.g., MOC3043VM)
6
SCHEMATIC
1
ANODE 1
6 MAIN TERM.
CATHODE 2
5 NC*
ZERO
CROSSING
CIRCUIT
APPLICATIONS
•
•
•
•
Solenoid/valve controls
Static power switches
Temperature controls
AC motor starters
•
•
•
•
Lighting controls
AC motor drives
E.M. contactors
Solid state relays
N/C 3
4 MAIN TERM.
*DO NOT CONNECT
(TRIAC SUBSTRATE)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameters
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Junction Temperature Range
Isolation Surge Voltage
(1)
(peak AC voltage, 60Hz, 1 sec duration)
Total Device Power Dissipation @ 25°C
Derate above 25°C
EMITTER
Continuous Forward Current
Reverse Voltage
Total Power Dissipation 25°C Ambient
Derate above 25°C
DETECTOR
Off-State Output Terminal Voltage
Peak Repetitive Surge Current (PW = 100
µs,
120 pps)
Total Power Dissipation @ 25°C Ambient
Derate above 25°C
V
DRM
I
TSM
P
D
Symbol
T
STG
T
OPR
T
SOL
T
J
V
ISO
P
D
I
F
V
R
P
D
Device
All
All
All
All
All
All
All
All
All
MOC3031M/2M/3M
MOC3041M/2M/3M
All
All
All
Value
-40 to +150
-40 to +85
260 for 10 sec
-40 to +100
7500
250
2.94
60
6
120
1.41
250
400
1
150
1.76
Units
°C
°C
°C
°C
Vac(pk)
mW
mW/°C
mA
V
mW
mW/°C
V
A
mW
mW/°C
Note
1. Isolation surge voltage, V
ISO
, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4,
5 and 6 are common.
2001 Fairchild Semiconductor Corporation
DS300256
8/06/01
1 OF 9
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6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)
MOC3031M
MOC3032M
MOC3033M
MOC3041M
MOC3042M
MOC3043M
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Peak Blocking Current,Either Direction
I
F
= 30 mA
V
R
= 6 V
Rated V
DRM
, I
F
= 0 (note 1)
V
F
I
R
I
DRM1
V
TM
dv/dt
All
All
All
All
All
1.8
1000
1.25
0.01
1.5
100
100
3
V
µA
nA
V
V/µs
Test Conditions
Symbol
Device
Min
Typ
Max
Units
Peak On-State Voltage,Either Direction
I
TM
= 100 mA peak, I
F
= 0
Critical Rate of Rise of Off-State Voltage
I
F
= 0 (figure 9, note 3)
TRANSFER CHARACTERISTICS
DC Characteristics
LED Trigger Current
Holding Current, Either Direction
(T
A
= 25°C Unless otherwise specified.)
Symbol
I
FT
I
H
Device
MOC3031M/MOC3041M
MOC3032M/MOC3042M
MOC3033M/MOC3043M
All
400
Min
Typ
Max
15
10
5
µA
mA
Units
Test Conditions
Main terminal voltage = 3V (note 2)
ZERO CROSSING CHARACTERISTICS
Characteristics
Inhibit Voltage
Leakage in Inhibited State
Test Conditions
(T
A
= 25°C Unless otherwise specified.)
Symbol
V
IH
I
DRM2
Device
All
All
Min
Typ
Max
20
500
Units
V
µA
I
F
= rated I
FT
, MT1-MT2 voltage above
which device will not trigger off-state
I
F
= rated I
F
, rated V
DRM
, off-state
Note
1. Test voltage must be applied within dv/dt rating.
2. All devices are guaranteed to trigger at an I
F
value less than or equal to max I
FT
. Therefore, recommended operating I
F
lies between
max I
FT
(15 mA for MOC3031M & MOC3041M, 10 mA for MOC3032M & MOC3042M, 5 mA for MOC3033M & MOC3043M) and
absolute max I
F
(60 mA).
3. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
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DS300256
6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)
MOC3031M
MOC3032M
MOC3033M
MOC3041M
MOC3042M
MOC3043M
Figure 1. LED Forward Voltage vs. Forward Current
1.6
800
Figure 2. On-State Characteristics
I
F
= 30mA
1.5
600
T
A
= 25
o
C
I
TM
, ON-STATE CURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
1.4
400
1.3
T
A
= -40
o
C
T
A
= 25
o
C
T
A
= 85
o
C
1.0
200
1.2
0
1.1
-200
-400
0.9
-600
-800
0.8
0.1
1
10
100
-4
-3
-2
-1
0
1
2
3
4
I
F
- LED FORWARD CURRENT (mA)
V
TM
, ON-STATE VOLTAGE (VOLTS)
Figure 3. Trigger Current vs. Temperature
1.3
10000
Figure 4. Leakage Current, I
DRM
vs. Temperature
1.2
1000
I
DRM
, LEAKAGE CURRENT (nA)
I
FT
, NORMALIZED
1.1
100
1.0
10
0.9
NORMALIZED TO
T
A
= 25
o
C
1
0.1
0.8
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
T
A
, AMBIENT TEMPERATURE (
o
C)
T
A
, AMBIENT TEMPERATURE (
o
C)
DS300256
8/06/01
3 OF 9
www.fairchildsemi.com
6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)
MOC3031M
MOC3032M
MOC3033M
MOC3041M
MOC3042M
MOC3043M
Figure 5. I
DRM2
- Leakage in Inhibit State vs. Temperature
1.8
Figure 6. LED Current Required to Trigger vs. LED Pulse Width
16
NORMALIZED TO
PW
IN
>> 100 µs
I
FT
, LED TRIGGER CURRENT (NORMALIZED)
80
100
1.6
14
1.4
12
I
DRM2
, NORMALIZED
I
F
= RATED I
FT
1.2
10
1.0
8
0.8
6
0.6
4
0.4
-40
-20
0
20
40
60
2
T
A
, AMBIENT TEMPERATURE (
o
C)
0
1
10
100
PW
IN
, LED TRIGGER PULSE WIDTH (µs)
Figure 7. Holding Current, I
H
vs. Temperature
3.2
1.3
Figure 8. Inhibit Voltage vs. Temperature
2.8
1.2
I
H
, HOLDING CURRENT (NORMALIZED)
2.4
NORMALIZED TO
T = 25oC
A
2.0
V
INH
- NORMALIZED
1.1
1.0
1.6
1.2
0.9
0.8
0.8
0.4
0.7
0.0
-40
-20
0
20
40
60
o
80
100
-40
-20
0
20
40
60
o
80
100
T
A
, AMBIENT TEMPERATURE ( C)
T
A
, AMBIENT TEMPERATURE ( C)
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