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SGA-2463-TR1

Description
Wide Band Low Power Amplifier, 0MHz Min, 2000MHz Max,
CategoryWireless rf/communication    Radio frequency and microwave   
File Size248KB,7 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Download Datasheet Parametric View All

SGA-2463-TR1 Overview

Wide Band Low Power Amplifier, 0MHz Min, 2000MHz Max,

SGA-2463-TR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerQorvo
Reach Compliance Codeunknown
Characteristic impedance50 Ω
structureCOMPONENT
Gain18.2 dB
Maximum input power (CW)4 dBm
JESD-609 codee0
Maximum operating frequency2000 MHz
Minimum operating frequency
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesWIDE BAND LOW POWER
Terminal surfaceTin/Lead (Sn/Pb)
Maximum voltage standing wave ratio1.3
Preliminary
Product Description
Stanford Microdevices’ SGA-2463 is a high performance
cascadeable 50-ohm amplifier designed for operation at
voltages as low as 2.6V. This RFIC uses the latest Silicon
Germanium Heterostructure Bipolar Transistor (SiGe HBT)
process featuring 1 micron emitters with F
T
up to 50 GHz.
This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-2463 requires only DC
blocking and bypass capacitors for external components.
SGA-2463
DC-2000 MHz Silicon Germanium
HBT Cascadeable Gain Block
Small Signal Gain vs. Frequency
24
18
Product Features
DC-2000 MHz Operation
Single Voltage Supply
Low Current Draw: 20mA at 2.6V typ.
High Output Intercept: +19.5dBm typ. at
1950 MHz
Low Noise Figure: 2.6dB typ. at 850 MHz
Applications
Oscillator Amplifiers
Cordless Phones
IF/ RF Buffer Amplifier
Drivers for CATV Amplifiers
Units
f = 850 MHz
f = 1950 MHz
f = DC - 1000 MHz
f = 1000 - 2000 MHz
f = DC - 1000 MHz
f = 1000 - 2000 MHz
f = DC - 2000 MHz
f = DC - 2000 MHz
f = 850 MHz
f = 1950 MHz
f = DC - 1000 MHz
f = 1000 - 2000 MHz
f = 1000 MHz
dB m
dB m
dB
dB
dB
dB
-
-
dB m
dB m
dB
dB
pS
V
2.3
18.2
Min.
Typ.
9.2
6.6
20.2
18.1
23.2
23.1
1.6
1.3
20.1
19.5
2.6
3.1
111
2.6
2.9
Max.
dB
1 2
6
0
100
500
900
1900
2400
3500
6000
Frequency MHz
Symbol
P
1dB
Parameters: Test Conditions:
Z
0
= 50 Ohms, Id = 20 mA, T = 25ºC
Output Power at 1dB Compression
S
21
Small Signal Gain
S
12
S
11
S
22
IP
3
NF
T
D
V
D
Reverse Isolation
Input VSWR
Output VSWR
Third Order Intercept Point
Power out per Tone = -10 dBm
Noise Figure
Group Delay
Device Voltage
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-100630 Rev A

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