NPN SiGe RF TRANSISTOR
NESG2030M04
NPN SiGe HIGH FREQUENCY TRANSISTOR
FEATURES
•
•
•
•
SiGe TECHNOLOGY:
f
T
= 60 GHz Process
LOW NOISE FIGURE:
NF = 0.9 dBm at 2 GHz
HIGH MAXIMUM STABLE GAIN:
MSG = 20 dB at 2 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
M04
DESCRIPTION
NEC's NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process. With a typical transition frequency of
60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides
a device with a usable current range of 250
μA
to 25 mA. The NESG2030M04 provides excellent low voltage/low current performance.
NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NESG2030M04 is an ideal
choice for LNA and oscillator requirements in all mobile communication systems.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 0.5 V, I
C
= 0
DC Current Gain
2
at V
CE
= 2 V, I
C
= 5 mA
Reverse Transfer Capacitance
3
at V
CB
= 2 V, I
E
= 0 mA, f = 1 GHz
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
IN
= Z
OPT
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
S
= Z
OPT
Maximum Stable Gain
4
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Output Power at 1 dB compression point
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Third Order Intercept Point, V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
pF
dB
GHz
dB
dB
dBm
dBm
18
16
UNITS
nA
nA
200
0.17
0.9
16
20
18
12
22
MIN
NESG2030M04
2SC5761
M04
TYP
MAX
200
200
400
0.22
1.1
DC
I
EBO
h
FE
C
re
NF
G
a
MSG
RF
|S
21E
|
2
P
1dB
OIP
3
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
μs,
duty cycle
≤
2 %.
3. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
4. MSG = S
21
S
12
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005
NESG2030M04
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T2
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
8.0
2.3
1.2
35
80
150
-65 to +150
THERMAL RESISTANCE
SYMBOLS
R
th j-c
PARAMETERS
Junction to Case Resistance
UNITS
°C/W
RATINGS
150
ORDERING INFORMATION
(Solder Contains Lead)
PART NUMBER
NESG2030M04
NESG2030M04-T2
QUANTITY
50 pcs(non reel)
3 kpcs/reel
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm
2
• 1.0 mm (t) glass epoxy substrate
ORDERING INFORMATION (Pb-Free)
PART NUMBER
NESG2030M04-A
NESG2030M04-T2-A
QUANTITY
50 pcs(non reel)
3 kpcs/reel
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1000
V
CE
= 2 V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
35
190
μa
160
μa
130
μa
100
μa
70
μa
40
μa
I
B
= 10
μa
10
0.1
Collector Current, Ic (mA)
30
25
20
15
10
5
0
0
1
2
DC Current Gain, hFE
100
3
1
10
100
Collector to Emitter Voltage, V
CE
(V)
Collector Current, l
C
(mA)
GAIN BANDWIDTH vs.
COLLECTOR CURRENT
40
V
CE
= 2 V
f = 2 GHz
INSERTION POWER GAIN
vs. FREQUENCY
30
V
CE
= 2 V
I
C
= 20 mA
25
30
25
20
15
10
5
0
0
10
100
Insertion Power Gain, |S
21e
|
2
(dB)
35
Gain Bandwdth, f
T
(GHz)
20
15
10
5
0
0.1
1
10
Collector Current, I
C
(mA)
Frequency, f (GHz)
NESG2030M04
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
MAXIMUM STABLE GAIN,
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
30
30
V
CE
= 2 V
f = 1 GHz
25
MSG
|S
21e
|
2
MAXIMUM STABLE GAIN,
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
V
CE
= 2 V
f = 2 GHz
25
MSG
Maximum Stable Gain, MSG (dB)
Insertion Power Gain, IS
21e
I
2
Maximum Stable Gain, MSG (dB)
Insertion Power Gain, IS
21e
I
2
20
20
15
15
|S
21e
|
2
10
10
5
5
0
1
10
100
0
1
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
MAXIMUM AVAILABLE GAIN,
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
30
25
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
V
CE
= 2 V, f = GHz
I
cq
= 5 mA(RF OFF)
80
70
60
P
out
50
40
30
20
I
C
-10
10
0
-15
-10
-5
0
5
Insertion Power Gain, IS
21e
I
2
Maximum Available Gain, MAG (dB)
V
CE
= 2 V
f = 5 GHz
20
Output Power, P
out
(dBm)
15
10
5
0
-5
20
15
MAG
10
|S
21e
|
2
5
0
1
10
100
-15
-20
Collector Current, I
C
(mA)
THIRD ORDER INTERMODULATION
DISTORTION
vs. OUTPUT POWER
70
60
V
CE
= 2 V
I
cq
= 5 mA
f = 2 GHz
offset = 1 MHz
5
V
CE
= 2 V
f = 1.5 GHz
Input Power, P
in
(V)
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
25
G
a
20
Third Order Intermodulation Distortion, IM3 (dBc)
50
40
30
Noise Figure, NF (dB)
4
3
15
2
10
20
10
1
NF
5
0
-5
0
5
10
15
20
0
1
10
0
100
Output Power (each tone), P
out
(mA)
Collector Current, I
C
(mA)
Associated Gain, G
A
(dB)
Collector Current, I
C
(mA)
25
NESG2030M04
TYPICAL PERFORMANCE CURVES
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
5
V
CE
= 2 V
f = 2 GHz
25
(T
A
= 25°C)
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
5
V
CE
= 2 V
f = 2.5 GHz
25
Associated Gain, G
A
(dB)
G
a
G
a
3
15
3
15
2
10
2
10
1
NF
5
1
NF
5
0
1
10
0
100
0
1
10
0
100
Collector Current, I
C
(mA)
Collector Current, l
C
(mA)
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
5
V
CE
= 2 V
f = 3 GHz
20
25
5
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
25
V
CE
= 2 V
f = 4 GHz
Associated Gain, G
A
(dB)
3
G
a
15
3
G
a
15
2
10
2
10
1
NF
5
1
NF
5
0
1
10
0
100
0
1
10
0
100
Collector Current, I
C
(mA)
Collector Current, l
C
(mA)
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
5
V
CE
= 2 V
f = 5 GHz
25
3
G
a
2
15
10
1
NF
5
0
1
10
0
100
Collector Current, I
C
(mA)
Associated Gain, G
A
(dB)
4
20
Noise Figure, NF (dB)
Associated Gain, G
A
(dB)
4
4
20
Noise Figure, NF (dB)
Noise Figure, NF (dB)
Associated Gain, G
A
(dB)
4
20
4
20
Noise Figure, NF (dB)
Noise Figure, NF (dB)
NESG2030M04
TYPICAL NOISE PARAMETERS
(T
A
= 25°C)
FREQ.
(GHz)
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.7
1.9
2.0
2.2
2.4
2.5
2.7
3.0
3.5
4.0
4.5
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.7
1.9
2.0
2.2
2.4
2.5
2.7
3.0
3.5
4.0
4.5
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.7
1.9
NF
MIN
(dB)
0.77
0.77
0.78
0.78
0.79
0.79
0.80
0.81
0.82
0.84
0.85
0.87
0.89
0.91
0.93
0.98
1.06
1.15
1.26
0.95
0.95
0.95
0.95
0.95
0.95
0.96
0.96
0.96
0.97
0.98
0.99
1.00
1.01
1.03
1.06
1.12
1.19
1.27
1.26
1.25
1.25
1.25
1.25
1.25
1.25
1.25
1.25
1.26
G
A
(dB)
22.62
21.79
21.03
20.33
19.69
19.10
18.56
18.05
17.13
16.31
15.94
15.26
14.64
14.36
13.83
13.12
12.12
11.31
10.63
24.28
23.43
22.65
21.93
21.27
20.65
20.08
19.54
18.56
17.70
17.30
16.56
15.89
15.58
15.00
14.23
13.13
12.23
11.48
25.33
24.45
23.65
22.91
22.23
21.60
21.01
20.46
19.46
18.57
Γ
OPT
MAG
0.440
0.433
0.426
0.418
0.410
0.402
0.394
0.386
0.372
0.359
0.354
0.345
0.340
0.338
0.338
0.342
0.354
0.354
0.325
0.264
0.261
0.257
0.253
0.249
0.244
0.239
0.234
0.226
0.219
0.216
0.213
0.213
0.214
0.219
0.229
0.249
0.258
0.243
0.082
0.081
0.079
0.076
0.074
0.071
0.068
0.065
0.061
0.062
ANG
22.0
25.3
28.6
32.0
35.5
39.0
42.6
46.3
54.0
62.1
66.3
74.9
83.6
87.9
96.4
108.6
126.4
141.4
155.7
18.6
21.8
25.1
28.5
32.0
35.6
39.3
43.2
51.5
60.4
65.0
74.6
84.2
88.9
98.1
108.6
110.7
142.4
156.3
14.2
17.4
20.9
24.9
29.4
34.5
40.4
47.1
63.0
81.1
Rn/50
0.21
0.21
0.20
0.20
0.19
0.19
0.18
0.18
0.17
0.16
0.16
0.15
0.14
0.14
0.13
0.12
0.11
0.09
0.08
0.18
0.18
0.18
0.17
0.17
0.17
0.17
0.16
0.16
0.15
0.15
0.14
0.14
0.13
0.13
0.12
0.11
0.10
0.10
0.17
0.17
0.17
0.17
0.17
0.16
0.16
0.16
0.15
0.15
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
0.59–0.05
0.11 +0.1
-0.05
1
+0.1
0.30-0.05
(Leads 1, 3, 4)
2.0 –0.1
1.25
0.65
0.60
+0.1
0.40-0.06
2
1.25–0.1
3
2.05–0.1
TYPICAL NOISE PARAMETERS
(CONT')
FREQ.
(GHz)
2.0
2.2
2.4
2.5
2.7
3.0
3.5
4.0
4.5
NF
MIN
(dB)
1.26
1.27
1.28
1.28
1.30
1.32
1.36
1.42
1.48
G
A
(dB)
18.16
17.40
16.71
16.39
15.79
14.97
13.81
12.84
12.02
Γ
OPT
MAG
0.064
0.072
0.083
0.090
0.105
0.128
0.159
0.175
0.169
ANG
90.1
106.5
119.5
124.8
133.5
143.2
154.7
164.5
176.7
Rn/50
0.15
0.15
0.14
0.14
0.14
0.13
0.13
0.12
0.12
V
CE
= 2 V, I
C
= 5 mA
V
CE
= 2 V, I
C
= 20 mA
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M04
FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD
V
CE
= 2 V, I
C
= 10 mA
T16
4
0.65
1.30
0.65
V
CE
= 2 V, I
C
= 20 mA
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