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D1-28Z

Description
RF Small Signal Bipolar Transistor, 1A I(C), Ultra High Frequency Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size17KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

D1-28Z Overview

RF Small Signal Bipolar Transistor, 1A I(C), Ultra High Frequency Band, Silicon, NPN,

D1-28Z Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionPOST/STUD MOUNT, O-CRPM-F4
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-based maximum capacity5 pF
ConfigurationSingle
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-CRPM-F4
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
D1-28Z
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
D1-28Z
is Designed for General
Purpose Class C Amplifier
Applications up to 1.0 GHz.
PACKAGE STYLE .280 4L STUD
A
45°
C
B
FEATURES:
P
G
= 8.0 dB Typ. at 1 W/1,000 MHz
Emitter Ballasting for Ruggedness
Omnigold™
Metallization System
D
E
B
C
E
J
E
F
G
I
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
1.0 A
45 V
7 W @ T
C
= 25 C
-65 to +200
O
C
-65 to +150
O
C
25
O
C/W
O
H
K
DIM
A
B
C
D
E
F
G
H
I
J
K
.175 / 4.45
.275 / 6.99
.245 / 6.22
.640 / 16.26
MINIMUM
inches / mm
#8-32 UNC
MAXIMUM
inches / mm
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
.217 / 5.51
.285 / 7.24
ORDER CODE: ASI10807
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
EBO
I
CBO
h
FE
C
ob
P
G
η
C
I
C
= 1 mA
I
C
= 20 mA
I
E
= 1 mA
V
CE
= 28 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 28 V
T
C
= 25
O
C
TEST CONDITIONS
R
BE
= 10
MINIMUM TYPICAL MAXIMUM
45
45
3.5
250
UNITS
V
V
V
µ
A
---
pF
dB
%
I
C
= 100 mA
f = 1.0 MHz
P
OUT
= 1.0 W
f = 1,000 MHz
15
150
5.0
7.0
65
8.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
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