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Datasheet> All Categories > Discrete semiconductor> The transistor> BF491
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BF491

Description
PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS High Voltage Video Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size396KB，4 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance
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BF491 Overview

PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS High Voltage Video Amplifier

BF491 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-W3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)265
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz

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PNP SILICON PLANAR EPITAXIAL
HIGH VOLTAGE VIDEO TRANSISTORS
High Voltage Video Amplifier
Darlington Transistor
* Power Dissipation: P
D
=625mW
BF491
THRU
BF493
TO-92
.205(5.20)
.175(4.45)
.210(5.33)
.170(4.32)
.50(12.7MIN.)
3 2 1
.082(2.082)
.078(1.982)
.022(0.55)
.016(0.41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
o
.058(1.40)
.045(1.14)
.055(1.40)
.045(1.14)
.020(0.50)
.014(0.35)
COLLECTOR
.165(4.19)
.125(3.18)
.062(1.53)
.045(1.14)
1
3 2 1
BASE
2
3
EMITTER
Dimensions in inches and (millimeters)
Absolute Maximum Ratings
T
A
=25
O
C unless otherwise noted
DESCRIPTION
Collector-Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation @ Ta=25ºC
Derate Above 25ºC
Total Device Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
Tj,T
STG
BF491
200
200
6
BF492
250
250
8
500
625
1.2
1500
12
-55 to + 150
BF493
300
300
8
UNITS
Volts
Volts
Volts
mAmps
mW
mW/ C
mW
mW/
0
C
0
0
C
ELECTRICAL CHARACTERISTICS
T
A
=25
O
C unless otherwise noted
DESCRIPTION
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Test Condition
I
C
=0.1mA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100uA,I
C
=0
V
CB
=160V,I
E
=0
V
CB
=200V,I
E
=0
V
EB
=4.0V,I
C
=0
V
EB
=6.0V,I
C
=0
I
C
=1mA,V
CE
=10V
I
C
=10mA,V
CE
=10V
I
C
=20mA,I
B
=2mA
I
C
=20mA,I
B
=2mA
SYMBOL
BV
CBO
BV
CEO
*
BV
EBO
I
CBO
I
EBO
BF491
>200
>200
>6.0
<0.1
<0.1
<0.1
<0.1
>25
>40
<2
<2
>25
>40
<2
<2
<0.1
>25
>40
<2
<2
Volts
Volts
VD 2009-10
REV: O
<0.1
BF492
>250
>250
>8.0
BF493
>300
>300
>8.0
UNITS
Volts
Volts
Volts
uA
uA
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
h
FE
V
CE(sat)
V
BE(sat)

BF491 Related Products

BF491 BF492 BF493
Description PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS High Voltage Video Amplifier PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS High Voltage Video Amplifier PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS High Voltage Video Amplifier
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor
Parts packaging code TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-W3 TO-92, 3 PIN CYLINDRICAL, O-PBCY-W3
Contacts 3 3 3
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 200 V 250 V 300 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 40
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-W3 O-PBCY-W3 O-PBCY-W3
JESD-609 code e3 e3 e3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 265 265 265
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz 50 MHz

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