EEWORLDEEWORLDEEWORLD

Part Number

Search

LN66(L)S

Description
5 mm, 1 ELEMENT, INFRARED LED, 950 nm
CategoryLED optoelectronic/LED    photoelectric   
File Size176KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

LN66(L)S Overview

5 mm, 1 ELEMENT, INFRARED LED, 950 nm

LN66(L)S Parametric

Parameter NameAttribute value
MakerPanasonic
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum forward current0.1 A
Number of functions1
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Optoelectronic device typesINFRARED LED
Nominal output power7 mW
peak wavelength950 nm
shapeROUND
size5 mm
Infrared Light Emitting Diodes
LN66
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems
Features
High-power output, high-efficiency : P
O
= 8 mW (typ.)
Emitted light spectrum suited for silicon photodetectors
Wide directivity :
θ
= 25 deg. (typ.)
Transparent epoxy resin package
7.65±0.2
ø5.0±0.2
Not soldered
2-1.0±0.15
2-0.6±0.15
2.54
0.6±0.15
2
1
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Symbol
P
D
I
F
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Storage temperature
I
FP*
V
R
Operating ambient temperature
T
opr
T
stg
*
f = 100 Hz, Duty cycle = 0.1 %
Parameter
isc
on
Electro-Optical Characteristics
(Ta = 25˚C)
Symbol
P
O*
λ
P
∆λ
V
F
I
R
C
t
θ
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Half-power angle
Ma
int
en
an
Peak emission wavelength
ce
Radiant power
Capacitance between pins
*
P
O
Classifications
Class
P
O
(mW)
R
5 to 8
S
>7
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Ratings
160
100
1.5
3
Unit
mW
mA
A
V
ø6.0±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
Good radiant power output linearity with respect to input current
13.5±1.0
11.5±1.0
3.6±0.3
1.0
1.0
1: Cathode
2: Anode
–25 to +85
˚C
– 40 to +100
˚C
tin
ue
Conditions
min
5
typ
8
max
Unit
nm
V
/D
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
V
R
= 3V
mW
nm
950
50
1.3
35
25
I
F
= 100mA
1.6
10
µA
pF
V
R
= 0V, f = 1MHz
The angle in which radiant intencity is 50%
deg.
1

LN66(L)S Related Products

LN66(L)S LN660000R LN66(L)R
Description 5 mm, 1 ELEMENT, INFRARED LED, 950 nm EMITTER IR 950NM 100MA T 1 3/4 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
Maker Panasonic - Panasonic
Reach Compliance Code unknown - unknown
Configuration SINGLE - SINGLE
Maximum forward current 0.1 A - 0.1 A
Number of functions 1 - 1
Maximum operating temperature 85 °C - 85 °C
Minimum operating temperature -25 °C - -25 °C
Optoelectronic device types INFRARED LED - INFRARED LED
Nominal output power 7 mW - 5 mW
peak wavelength 950 nm - 950 nm
shape ROUND - ROUND
size 5 mm - 5 mm

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2109  873  2159  537  202  43  18  44  11  5 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号