Standard SRAM, 16KX4, 55ns, CMOS, CDIP22,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | TEMIC |
| Reach Compliance Code | unknown |
| Maximum access time | 55 ns |
| I/O type | COMMON |
| JESD-30 code | R-XDIP-T22 |
| JESD-609 code | e0 |
| memory density | 65536 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Number of terminals | 22 |
| word count | 16384 words |
| character code | 16000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 16KX4 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP22,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | MIL-STD-883 Class B (Modified) |
| Maximum standby current | 0.02 A |
| Minimum standby current | 4.5 V |
| Maximum slew rate | 0.07 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| HM1-65788N-8 | HM1-65788K-8 | HM4-65788K-8 | HM1-65788M-8 | HM4-65788M-8 | HM4-65788N-8 | |
|---|---|---|---|---|---|---|
| Description | Standard SRAM, 16KX4, 55ns, CMOS, CDIP22, | Standard SRAM, 16KX4, 35ns, CMOS, CDIP22, | Standard SRAM, 16KX4, 35ns, CMOS, CQCC22, | Standard SRAM, 16KX4, 45ns, CMOS, CDIP22, | Standard SRAM, 16KX4, 45ns, CMOS, CQCC22, | Standard SRAM, 16KX4, 55ns, CMOS, CQCC22, |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | TEMIC | TEMIC | TEMIC | TEMIC | TEMIC | TEMIC |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| Maximum access time | 55 ns | 35 ns | 35 ns | 45 ns | 45 ns | 55 ns |
| I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | R-XDIP-T22 | R-XDIP-T22 | R-XQCC-N22 | R-XDIP-T22 | R-XQCC-N22 | R-XQCC-N22 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
| memory density | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 4 | 4 | 4 | 4 | 4 | 4 |
| Number of terminals | 22 | 22 | 22 | 22 | 22 | 22 |
| word count | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
| character code | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| organize | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
| encapsulated code | DIP | DIP | QCCN | DIP | QCCN | QCCN |
| Encapsulate equivalent code | DIP22,.3 | DIP22,.3 | LCC22,.3X.5 | DIP22,.3 | LCC22,.3X.5 | LCC22,.3X.5 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | CHIP CARRIER | IN-LINE | CHIP CARRIER | CHIP CARRIER |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Filter level | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) |
| Maximum standby current | 0.02 A | 0.02 A | 0.02 A | 0.02 A | 0.02 A | 0.02 A |
| Minimum standby current | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Maximum slew rate | 0.07 mA | 0.07 mA | 0.07 mA | 0.07 mA | 0.07 mA | 0.07 mA |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | YES | NO | YES | YES |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | NO LEAD | NO LEAD |
| Terminal pitch | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm |
| Terminal location | DUAL | DUAL | QUAD | DUAL | QUAD | QUAD |