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DTC114GUA

Description
100mA / 50V Digital transistors (with built-in resistor)
CategoryDiscrete semiconductor    The transistor   
File Size129KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

DTC114GUA Overview

100mA / 50V Digital transistors (with built-in resistor)

DTC114GUA Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Other featuresDIGITAL, BUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
100mA / 50V Digital transistors
(with built-in resistor)
DTC114GUA / DTC114GKA
Applications
Inverter, Interface, Driver
Features
1)The built-in bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input, and parasitic effects
are almost completely eliminated.
2)Only the on / off conditions need to be set for operation, making the
device design easy.
3)Higher mounting densities can be achieved.
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications
Package
Packaging type
Code
Part No.
Basic ordering unit (pieces)
DTC114GUA
DTC114GKA
UMT3
Taping
T106
3000
SMT3
T146
3000
ROHM : SMT3
EIAJ : SC-59
Abbreviated symbol : K24
Dimensions
(Unit : mm)
DTC114GUA
2.0
0.3
(3)
0.9
0.2
0.7
1.25
(2)
(1)
2.1
0.1Min.
0.3Min.
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
1.3
0.15
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Abbreviated symbol : K24
DTC114GKA
2.9
0.4
(3)
1.1
0.8
Taping
(2)
(1)
0.95 0.95
0.15
1.9
1.6
2.8
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Absolute maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
50
50
5
100
200
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
Inner circuit
B
R
C
E
E : Emitter
C : Collector
B : Base
R=10kΩ
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.06 - Rev.C

DTC114GUA Related Products

DTC114GUA DTC114GKA DTC114GUA_09
Description 100mA / 50V Digital transistors (with built-in resistor) 100mA / 50V Digital transistors (with built-in resistor) 100mA / 50V Digital transistors (with built-in resistor)
Is it lead-free? Lead free Lead free -
Is it Rohs certified? conform to conform to -
Maker ROHM Semiconductor ROHM Semiconductor -
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
Reach Compliance Code compli compli -
ECCN code EAR99 EAR99 -
Is Samacsys N N -
Other features DIGITAL, BUILT IN BIAS RESISTOR DIGITAL, BUILT IN BIAS RESISTOR -
Maximum collector current (IC) 0.1 A 0.1 A -
Collector-emitter maximum voltage 50 V 50 V -
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR -
Minimum DC current gain (hFE) 30 30 -
JESD-30 code R-PDSO-G3 R-PDSO-G3 -
JESD-609 code e1 e1 -
Number of components 1 1 -
Number of terminals 3 3 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 260 -
Polarity/channel type NPN NPN -
Maximum power dissipation(Abs) 0.2 W 0.2 W -
Certification status Not Qualified Not Qualified -
surface mount YES YES -
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) -
Terminal form GULL WING GULL WING -
Terminal location DUAL DUAL -
Maximum time at peak reflow temperature 10 10 -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
Base Number Matches 1 1 -
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