100mA / 50V Digital transistors
(with built-in resistors)
DTC143TM / DTC143TE / DTC143TUA / DTC143TKA
Applications
Inverter, Interface, Driver
Features
1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3)Only the on/off conditions need to be set for operation, making the device design easy.
Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
Dimensions
(Unit : mm)
DTC143TM
0.2
1.2
0.32
(3)
DTC143TE
1.6
0.3
(3)
0.7
0.55
0.8
1.2
0.8
0.13
0.5
0.2
(2)
(1)
0.2
0.22
(1)(2)
1.6
0.4 0.4
0.8
0.2
0.5 0.5
ROHM : VMT3
(1) Base
(2) Emitter
(3) Collector
0.15
0.1Min.
ROHM : EMT3
1.0
Abbreviated symbol : 03
Abbreviated symbol : 03
(1) Emitter
(2) Base
(3) Collector
DTC143TUA
2.0
0.3
(3)
0.9
0.2
0.7
DTC143TKA
2.9
0.4
(3)
1.1
0.8
1.25
2.1
(2)
(1)
0.1Min.
ROHM : UMT3
EIAJ : SC-70
1.3
0.15
0.95 0.95
ROHM : SMT3
EIAJ : SC-59
0.15
1.9
Each lead has same dimensions
Each lead has same dimensions
Abbreviated symbol : 03
Abbreviated symbol : 03
Inner
circuit
C
B
R
1
E
B : Base
C : Collector
E : Emitter
R
1
=4.7kΩ
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2009 ROHM Co., Ltd. All rights reserved.
0.3Min.
0.65 0.65
(1) Emitter
(2) Base
(3) Collector
(2)
(1)
1.6
2.8
(1) Emitter
(2) Base
(3) Collector
1/2
2009.06 - Rev.B
DTC143TM / DTC143TE / DTC143TUA / DTC143TKA
Packaging specifications
Package
Packaging type
Code
Basic ordering
unit (pieces)
VMT3
EMT3
UMT3
SMT3
Data Sheet
Taping
T2L
8000
Taping
TL
3000
−
Taping
T106
3000
−
−
Taping
T146
3000
−
−
−
Part No.
DTC143TM
DTC143TE
DTC143TUA
DTC143TKA
−
−
−
−
−
−
Absolute maximum ratings
(Ta=25C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
150
150
−55
to
+150
Limits
DTC143TM DTC143TE DTC143TUA DTC143TKA
Unit
V
V
V
mA
200
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
50
50
5
100
Electrical characteristics
(Ta=25C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
∗
Min.
50
50
5
−
−
−
100
3.29
−
Typ.
−
−
−
−
−
−
250
4.7
250
Max.
−
−
−
0.5
0.5
0.3
600
6.11
−
Unit
V
V
V
μA
μA
V
−
kΩ
MHz
I
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=50V
V
EB
=4V
I
C
/I
B
=5mA/0.25mA
I
C
=1mA,
V
CE
=5V
−
V
CE
=10V,
I
E
=−5mA,
f=100MHz
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗
Characteristics of built-in transistor
Electrical characteristic curves
V
CE
=
5V
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
1k
500
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
100μ 200μ 500μ 1m
2m
5m
Ta=100°C
25°C
−40°C
l
C
/l
B
=20
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
1
100μ 200μ 500μ 1m
2m
5m
10m 20m
50m 100m
Ta=100°C
25°C
−40°C
10m 20m
50m 100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain vs.
collector current
Fig.2 Collector-emitter saturation
voltage vs. collector current
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2009 ROHM Co., Ltd. All rights reserved.
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2009.06 - Rev.B
Notice
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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