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DTC144WE_09

Description
100mA / 50V Digital transistors (with built-in resistors)
File Size135KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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DTC144WE_09 Overview

100mA / 50V Digital transistors (with built-in resistors)

100mA / 50V Digital transistors
(with built-in resistors)
DTC124EM / DTC124EE / DTC124EUA / DTC124EKA
Applications
Inverter, Interface, Driver
Features
1)Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors (see the
equivalent circuit).
2)The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have
the advantage of almost completely eliminating parasitic
effects.
3)Only the on / off conditions need to be set for operation,
making the device design easy.
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
ROHM : EMT3
Dimensions
(Unit : mm)
DTC124EM
(3)
0.2
0.22
(1)(2)
0.8
1.2
0.4 0.4
0.8
0.13
0.5
0.2
1.2
0.32
ROHM : VMT3
(1) IN
(2) GND
(3) OUT
Abbreviated symbol : 25
DTC124EE
1.6
0.3
(3)
0.7
0.55
0.8
(2)
(1)
1.6
0.2
0.5 0.5
1.0
0.2
0.15
0.1Min.
(1) GND
(2) IN
(3) OUT
Packaging specifications
Package
Packaging type
Code
Basic ordering
unit (pieces)
VMT3
EMT3
UMT3
SMT3
Abbreviated symbol : 25
DTC124EUA
2.0
0.3
(3)
0.9
0.2
0.7
Taping
T2L
8000
Taping
TL
3000
Taping
T106
3000
Taping
T146
3000
(2)
1.25
(1)
Type
DTC124EM
DTC124EE
DTC124EUA
DTC124EKA
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
0.1Min.
0.3Min.
2.1
1.3
0.15
Abbreviated symbol : 25
2.9
0.4
1.1
0.8
(1) GND
(2) IN
(3) OUT
DTC124EKA
Inner circuit
(3)
R
1
IN
R
2
OUT
(2)
(1)
1.6
2.8
0.95 0.95
0.15
GND
ROHM : SMT3
EIAJ : SC-59
1.9
(1) GND
(2) IN
(3) OUT
Abbreviated symbol : 25
IN
GND
OUT
R
1
=R
2
=22kΩ
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.06 - Rev.B

DTC144WE_09 Related Products

DTC144WE_09 DTC124EE DTC124EKA DTC124EE_09 DTC124EM DTC124EUA DTC144WKA DTC144WE DTC144WUA
Description 100mA / 50V Digital transistors (with built-in resistors) 100mA / 50V Digital transistors (with built-in resistors) 100mA / 50V Digital transistors (with built-in resistors) 100mA / 50V Digital transistors (with built-in resistors) 100mA / 50V Digital transistors (with built-in resistors) 100mA / 50V Digital transistors (with built-in resistors) 100mA / 50V Digital transistors (with built-in resistors) 100mA / 50V Digital transistors (with built-in resistors) 100mA / 50V Digital transistors (with built-in resistors)
Is it lead-free? - Lead free Lead free - - Lead free Lead free Lead free Lead free
Is it Rohs certified? - conform to conform to - conform to conform to conform to conform to conform to
Maker - ROHM Semiconductor ROHM Semiconductor - ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor
package instruction - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 - , SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code - compli compli - compli compli compli compli compli
ECCN code - EAR99 EAR99 - - EAR99 EAR99 EAR99 EAR99
Is Samacsys - N N - N - N - N
Other features - DIGITAL, BUILT IN BIAS RESISTOR RATIO 1 DIGITAL, BUILT IN BIAS RESISTOR RATIO 1 - - DIGITAL, BUILT IN BIAS RESISTOR RATIO 1 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.47 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.47 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.47
Maximum collector current (IC) - 0.03 A 0.03 A - 0.1 A 0.03 A 0.03 A 0.03 A 0.03 A
Collector-emitter maximum voltage - 50 V 50 V - - 50 V 50 V 50 V 50 V
Configuration - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR - - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) - 56 56 - 56 56 56 56 56
JESD-30 code - R-PDSO-G3 R-PDSO-G3 - - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code - e1 e1 - e2 e1 e1 e1 e1
Number of components - 1 1 - 1 1 1 1 1
Number of terminals - 3 3 - - 3 3 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE - - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260 - - 260 260 260 260
Polarity/channel type - NPN NPN - NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) - 0.15 W 0.2 W - 0.15 W 0.2 W 0.2 W 0.15 W 0.2 W
Certification status - Not Qualified Not Qualified - - Not Qualified Not Qualified Not Qualified Not Qualified
surface mount - YES YES - YES YES YES YES YES
Terminal surface - Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) - Tin/Copper (Sn/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form - GULL WING GULL WING - - GULL WING GULL WING GULL WING GULL WING
Terminal location - DUAL DUAL - - DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature - 10 10 - - 10 10 10 10
transistor applications - SWITCHING SWITCHING - - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON - SILICON SILICON SILICON SILICON SILICON
Base Number Matches - 1 1 - 1 - 1 - 1
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