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DTD114EK

Description
500mA / 50V Digital transistors (with built-in resistors)
CategoryDiscrete semiconductor    The transistor   
File Size154KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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DTD114EK Overview

500mA / 50V Digital transistors (with built-in resistors)

DTD114EK Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresDIGITAL, BUILT IN BIAS RESISTOR RATIO 1
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)56
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
500mA / 50V Digital transistors
(with built-in resistors)
DTD114EK
Applications
Inverter, Interface, Driver
Features
1)Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors (see
equivalent circuit).
2)The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input.
They also have the advantage of almost completely eliminating
parasitic effects.
3)Only the on / off conditions need to be set for operation,
making the device design easy.
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications
Package
Packaging type
Code
Part No.
DTD114EK
Basic ordering
unit (pieces)
SMT3
Taping
T146
3000
R
1
=10kΩ R
2
=10kΩ
IN
GND
OUT
Dimensions
(Unit : mm)
DTD114EK
2.9
0.4
(3)
1.1
0.8
(2)
(1)
1.6
2.8
0.95 0.95
0.15
1.9
0.3Min.
ROHM : SMT3
EIAJ : SC-59
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Addreviated symbol : F24
Inner circuit
R
1
IN
R
2
GND
OUT
Absolute maximum ratings
(Ta=25C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
V
IN
I
C
P
D
Tj
Tstg
Limits
DTD114EK
50
−10
to
+40
500
200
150
−55
to
+150
V
V
mA
mW
C
C
Unit
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.06 - Rev.B

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