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DTD743EE

Description
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
File Size173KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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DTD743EE Overview

200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)

200mA / 30V Low V
CE
(sat) Digital transistors
(with built-in resistors)
DTD743EE / DTD743EM
Applications
Inverter, Interface, Driver
Dimensions
(Unit : mm)
DTD723YE
1.6
0.3
(3)
0.7
0.55
0.8
(2)
(1)
(3)
Structure
NPN epitaxial plannar silicon transistor
(Resistor built-in type)
Packaging specifications
Package
Packaging type
Code
Part No.
DTD723YE
DTD723YM
Basic ordering
unit (pieces)
EMT3
Taping
TL
3000
VMT3
Taping
T2L
8000
0.2
0.22
(1)(2)
0.8
1.2
0.2
Feature
1. V
CE (sat)
is lower than the conventional products.
2. Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
3. The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely eliminating
parasitic effects.
4. Only the on / off conditions need to be set for operation,
making the device design easy.
1.6
0.2
0.5 0.5
1.0
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.2
0.15
0.1Min.
0.13
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : M62
DTD723YM
1.2
0.32
0.4 0.4
0.8
0.5
(1) IN
(2) GND
(3) OUT
VMT3
Each lead has same dimensions
Abbreviated symbol : M62
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1
∗2
Inner circuit
Limits
Unit
R
1
OUT
Symbol
V
CC
V
IN
I
C (max)
P
D
Tj
Tstg
DTD743EE DTD743EM
30
−10
to
+20
200
150
150
−55
to
+150
V
V
mA
mW
IN
R
2
GND
IN
OUT
GND
C
C
∗1
Characteristics of built-in transistor.
∗2
Each terminal mounted on a recommended land.
R
1
=2.2kΩ / R
2
=10kΩ
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.05 - Rev.B

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