DATA SHEET
PHOTOCOUPLER
PS2581L1,PS2581L2
LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE
4-PIN PHOTOCOUPLER
−NEPOC
Series−
DESCRIPTION
The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon phototransistor in a plastic DIP (Dual In-line Package).
Creepage distance and clearance of leads are over 8 millimeters.
The PS2581L2 is lead bending type (Gull-wing) for surface mounting.
FEATURES
• Long creepage and clearance distance (8 mm)
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High collector to emitter voltage (V
CEO
= 80 V)
• High-speed switching (t
r
= 3
µ
s TYP., t
f
= 5
µ
s TYP.)
• High current transfer ratio (CTR = 200 % TYP.)
• UL approved: File No. E72422 (S)
• CSA approved: No. CA101391
• BSI approved: No. 8243/8244
• NEMKO approved: No. P97103006
• DEMKO approved: No. 307269
• SEMKO approved: No. 9741154/01
• FIMKO approved: No. 018277
• VDE0884 approved
ORDERING INFORMATION
Part Number
PS2581L1
PS2581L2
PS2581L2-E3, E4
4-pin DIP
4-pin DIP
(lead bending surface mount)
4-pin DIP taping
Package
Safety Standard Approval
UL, CSA, BSI, NEMKO, DEMKO,
SEMKO, FIMKO, VDE approved
Application Part Number
PS2581L1
PS2581L2
*1
*1
As applying to Safety Standard, following part number should be used.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PN10239EJ01V0DS (1st edition)
(Previous No. P12809EJ2V0DS00)
Date Published February 2003 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Compound Semiconductor Devices 1997, 2003
PS2581L1,PS2581L2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C, unless otherwise specified)
Parameter
Diode
Forward Current (DC)
Reverse Voltage
Power Dissipation Derating
Power Dissipation
Peak Forward Current
Transistor
*1
Symbol
I
F
V
R
Ratings
80
6
1.5
150
1
80
7
50
1.5
150
5 000
−55
to +100
−55
to +150
Unit
mA
V
mW/°C
mW
A
V
V
mA
mW/°C
mW
Vr.m.s.
°C
°C
∆
P
D
/°C
P
D
I
FP
V
CEO
V
ECO
I
C
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation
∆
P
C
/°C
P
C
BV
T
A
T
stg
Isolation Voltage
*2
Operating Ambient Temperature
Storage Temperature
*1
PW = 100
µ
s, Duty Cycle = 1 %
*2
AC voltage for 1 minute at T
A
= 25
°C,
RH = 60 % between input and output
Data Sheet PN10239EJ01V0DS
3
PS2581L1,PS2581L2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
Transistor
Coupled
Collector to Emitter Dark
Current
Current Transfer Ratio (I
C
/I
F
)
Collector Saturation Voltage
Isolation Resistance
Isolation Capacitance
Rise Time
Fall Time
*2
*1
Symbol
V
F
I
R
C
t
I
CEO
CTR
V
CE(sat)
R
I-O
C
I-O
t
r
t
f
Conditions
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1.0 MHz
V
CE
= 80 V, I
F
= 0 mA
I
F
= 5 mA, V
CE
= 5 V
I
F
= 10 mA, I
C
= 2 mA
V
I-O
= 1.0 kV
DC
V = 0 V, f = 1.0 MHz
V
CC
= 10 V, I
C
= 2 mA,
R
L
= 100
Ω
MIN.
TYP.
1.17
MAX.
1.4
5
Unit
V
µ
A
pF
50
100
80
200
400
0.3
10
11
nA
%
V
Ω
0.5
3
5
pF
µ
s
*2
*1
CTR rank
L : 200 to 400 (%)
M : 80 to 240 (%)
D : 100 to 300 (%)
H : 80 to 160 (%)
W : 130 to 260 (%)
N : 80 to 400 (%)
*2
Test circuit for switching time
Pulse Input
PW = 100
µ
s
Duty Cycle = 1/10
I
F
50
Ω
V
OUT
R
L
= 100
Ω
V
CC
4
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
TYPICAL CHARACTERISTICS (T
A
= 25
°
C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
150
150
Diode Power Dissipation P
D
(mW)
100
100
50
50
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
50
Forward Current I
F
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
70
Collector Current I
C
(mA)
T
A
= +100 ˚C
+60 ˚C
+25 ˚C
60
50
40
50
mA
10
5
0 ˚C
–25 ˚C
–55 ˚C
1
0.5
30
20
10
mA
A
20
m
10
I
F
= 5 mA
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
2
4
6
8
10
Forward Voltage V
F
(V)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
40
10 000
Collector Current I
C
(mA)
1 000
V
CE
= 80 V
40 V
24 V
10 V
5V
10
5
50 mA
20 mA
10 mA
5 mA
2 mA
100
1
0.5
I
F
= 1 mA
10
1
– 50
–25
0
25
50
75
100
0.1
0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(˚C)
Collector Saturation Voltage V
CE(sat)
(V)
Data Sheet PN10239EJ01V0DS
5
Embedded System
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