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RB050LA-40

Description
3 A, 40 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size109KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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RB050LA-40 Overview

3 A, 40 V, SILICON, RECTIFIER DIODE

RB050LA-40 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.5 V
JESD-30 codeR-PDSO-F2
JESD-609 codee1
Humidity sensitivity level1
Maximum non-repetitive peak forward current70 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
RB050LA-40
Diodes
Schottky barrier diode
RB050LA-40
Applications
General rectification
Features
1) Small power mold type
(PMDT)
2) Low I
R
3) High reliability
External dimensions
(Unit : mm)
Land size figure
(Unit : mm)
Structure
Silicon epitaxial planer
Structure
Taping dimensions
(Unit : mm)
Absolute maximum ratings
(Ta=25 C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz 1cyc)
Junction temperature
Storage temperature
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
(*1)Mounted on epoxy board. 180°Half sine wave
Limits
40
40
3
70
150
-55 to +150
Unit
V
V
A
A
Electrical characteristic
(Ta=25 C)
Parameter
Symbol
V
F
1
Forward voltage
V
F
2
Reverse current
I
R
Min.
-
-
-
Typ.
-
-
-
Max.
0.50
0.55
0.1
Unit
V
V
mA
Conditions
I
F
=1.5A
I
F
=3.0A
V
R
=40V
Rev.A
1/3

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Description 3 A, 40 V, SILICON, RECTIFIER DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE
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