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RB070M-30_1

Description
1.5 A, 30 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size119KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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RB070M-30_1 Overview

1.5 A, 30 V, SILICON, RECTIFIER DIODE

RB070M-30
Diodes
Schottky barrier diode
RB070M-30
Applications
General rectification
(Common cathode dual chip)
Dimensions
(Unit : mm)
1.6±0.1
0.1±0.1
    0.05
Land size figure
1.2
0.85
Features
1) Small power mold type.
(PMDU)
2) Low IR
3) High reliability
0.9±0.1
2.6±0.1
3.5±0.2
PMDU
Structure
Construction
Silicon epitaxial planar
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
0.8±0.1
Taping dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
1.75±0.1
0.25±0.05
3.5±0.05
8.0±0.2
1.81±0.1
4.0±0.1
φ1.0±0.1
3.71±0.1
1.5MAX
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz 1cyc.)
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
O
I
FSM
Tj
Tstg
Limits
30
30
1.5
30
150
−40
to 150
Unit
V
V
A
A
°C
°C
Glass epoxy substrate at the time of assembler, half sine wave at 180°.
Electrical characteristic
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F1
V
F2
I
R
Min.
Typ.
0.37
0.44
9
Max.
0.43
0.49
50
Unit
V
V
µA
Conditions
I
F
=0.5A
I
F
=1.5A
V
R
=30V
∗Please
pay attention to static electricity when handling.
Rev.B
3.05
1/3

RB070M-30_1 Related Products

RB070M-30_1 RB070M-30
Description 1.5 A, 30 V, SILICON, RECTIFIER DIODE 1.5 A, 30 V, SILICON, RECTIFIER DIODE

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