SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
Including two devices in US6.
(Ultra Super mini type with 6 leads)
Simplify circuit design.
A1
1
KTX101U
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
B
B1
6
5
4
D
C
Reduce a quantity of parts and manufacturing process.
2
3
DIM
A
A1
B
B1
C
D
G
MILLIMETERS
_
2.00 + 0.20
_
1.3 + 0.1
_
2.1 + 0.1
_
1.25 + 0.1
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 + 0.1
0.15+0.1/-0.05
A
C
H
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
H
T
G
T
MARKING
6
5
4
Lot No.
Q1
Q2
Type Name
B4
1
2
3
1.
2.
3.
4.
5.
6.
Q
1
Q
1
Q
2
Q
2
Q
2
Q
1
EMITTER
BASE
COLLECTOR
EMITTER
BASE
COLLECTOR
1
2
3
US6
Q
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
RATING
60
50
5
150
30
UNIT
V
V
V
Q
2
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
RATING
-50
-50
-5
-150
-30
UNIT
V
V
V
Q
1
Q
2
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
)
SYMBOL
P
C
*
T
j
T
stg
RATING
200
150
-55 150
UNIT
2008. 9. 23
Revision No : 5
1/5
KTX101U
Q
1
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Note)h
FE
Classification : Y(4)120~240,
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
GR(6)200~400
)
TEST CONDITION
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2
I
C
=100 , I
B
=10
V
CE
=10V, I
C
=1
V
CB
=10V, I
E
=0, f=1
V
CE
=6V, I
C
=0.1 , f=1
, Rg=10
MIN.
-
-
120
-
80
-
-
TYP.
-
-
-
0.1
-
2.0
1.0
MAX.
0.1
0.1
400
0.25
-
3.5
10
V
UNIT.
Q
2
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Note)h
FE
Classification : Y(4)120~240,
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
GR(6)200~400
)
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2
I
C
=-100
, I
B
=-10
MIN.
-
-
120
-
80
-
, Rg=10
-
TYP.
-
-
-
-0.1
-
4.0
1.0
MAX.
-0.1
-0.1
400
-0.3
-
7.0
10
V
UNIT.
V
CE
=-10V, I
C
=-1
V
CB
=-10V, I
E
=0, f=1
V
CE
=-6V, I
C
=-0.1
, f=1
2002. 1. 24
Revision No : 5
2/5
KTX101U
Q
1
(NPN TRANSISTOR)
I
C
- V
CE
240
COLLECTOR CURRENT I
C
(mA)
6.0
5.0
3.0
COMMON EMITTER
Ta=25 C
2.0
h
FE
- I
C
1k
DC CURRENT GAIN h FE
500
300
Ta=100 C
Ta=25 C
Ta=-25 C
V
CE
=6V
COMMON EMITTER
200
160
120
80
40
0
1.0
0.5
I
B
=-0.2mA
0
100
50
30
V
CE
=1V
0
1
2
3
4
5
6
7
10
0.1
0.3
1
3
10
30
100
300
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(mA)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
1
0.5
0.3
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
COMMON EMITTER
I
C
/I
B
=10
V
BE(sat)
- I
C
10
5
3
COMMON EMITTER
I
C
/I
B
=10
Ta=25 C
0.1
0.05
0.03
T
0
10
a=
C
1
0.5
0.3
Ta=25 C
Ta=-25 C
0.01
0.1
0.3
1
3
10
30
100
300
0.1
0.1
0.3
1
3
10
30
100
300
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
f
T
- I
C
TRANSITION FREQUENCY f
T
(MHz)
3k
1k
500
300
100
50
30
10
COMMON EMITTER
V
CE
=10V
Ta=25 C
I
B
- V
BE
3k
BASE CURRENT I
B
(µA)
1k
300
100
30
10
3
1
Ta=1
00 C
Ta=2
5 C
Ta=-
25 C
COMMON
EMITTER
V
CE
=6V
0.1
0.3
1
3
10
30
100
300
0.3
0
0.2
0.4
0.6
0.8
1.0
1.2
COLLECTOR CURRENT I C (mA)
BASE-EMITTER VOLTAGE VBE (V)
2008. 9. 23
Revision No : 5
3/5
KTX101U
Q
2
(PNP TRANSISTOR)
I
C
- V
CE
COLLECTOR CURRENT I
C
(mA)
-240
-200
-160
-120
-80
-40
0
I
B
=-0.5mA
I
B
=-0.2mA
I
B
=0mA
I
B
=-2.0mA
I
B
=-1.5mA
I
B
=-1.0mA
COMMON EMITTER
Ta=25 C
h
FE
- I
C
3k
DC CURRENT GAIN h
FE
COMMON EMITTER
1k
500
300
Ta=100 C
Ta=25 C
V
CE
=-6V
100
50
Ta=-25 C
V
CE
=-1V
0
-1
-2
-3
-4
-5
-6
-7
30
-0.1
-0.3
-1
-3
-10
-30
-100
-300
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(mA)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
-1
-0.5
-0.3
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
COMMON EMITTER
I
C
/I
B
=10
V
BE(sat)
- I
C
-10
-5
-3
COMMON EMITTER
I
C
/I
B
=10
Ta=25 C
-0.1
-0.05
-0.03
Ta
0
=1
0
C
-1
-0.5
-0.3
Ta=25 C
Ta=-25 C
-0.01
-0.1
-0.3
-1
-3
-10
-30
-100
-300
-0.1
-0.1
-0.3
-1
-3
-10
-30
-100
-300
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
f
T
- I
C
TRANSITION FREQUENCY f
T
(MHz)
3k
1k
500
300
100
50
30
10
0.1
COMMON EMITTER
V
CE
=-10V
Ta=25 C
I
B
- V
BE
-1k
BASE CURRENT I
B
(µA)
-300
-100
00 C
5 C
COMMON EMITTER
V
CE
=-6V
-10
-3
-1
-0.3
0
-0.2
0.3
1
3
10
30
100
300
-0.4
-0.6
Ta=-2
Ta=1
Ta=2
5 C
-30
-0.8
-1.0
-1.2
COLLECTOR CURRENT I
C
(mA)
BASE-EMITTER VOLTAGE V
BE
(V)
2008. 9. 23
Revision No : 5
4/5
KTX101U
COLLECTOR POWER DISSIPATION P
C
(mW)
Pc - Ta
250
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta ( C)
2008. 9. 23
Revision No : 5
5/5
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