SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
KTX401E
EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
B
FEATURES
Including two(TR, Diode) devices in TESV.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
A1
A
C
B1
(Thin Extreme Super mini type with 5pin.)
1
5
DIM
A
A1
B
2
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
5
4
5
4
3
4
B1
C
D
H
J
P
MILLIMETERS
_
1.6 + 0.05
_
1.0 + 0.05
_
1.6 + 0.05
_ 0.05
1.2+
0.50
_
0.2 + 0.05
_ 0.05
0.5 +
_
0.12 + 0.05
5
C
P
P
Lot No.
D1
Q1
H
Type Name
C
1
2
3
hFE Rank
1
2
3
1. D
1
2. Q
1
3. Q
1
4. Q
1
5. D
1
ANODE
EMITTER
BASE
COLLECTOR
CATHODE
MARK SPEC
KTX401E
Type
Q
1
h
FE
Rank : Y
Mark
CD
Q
1
h
FE
Rank : GR
CE
KTX401E
TESV
MAXIMUM RATINGS (Ta=25
TRANSISTOR Q
1
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DIODE D
1
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
60
50
5
150
30
100
150
-55~150
UNIT
V
V
V
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
RATING
85
80
300
100
2
-
150
-55 150
J
D
UNIT
V
V
A
2008. 9. 23
Revision No : 2
1/2
KTX401E
TRANSISTOR Q
1
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Note) h
FE
Classification Y(4):120~240,
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(SAT)
f
T
C
ob
NF
GR:200~400.
TEST CONDITION
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2
I
C
=100 , I
B
=10
V
CE
=10V, I
C
=1
V
CB
=10V, I
E
=0, f=1
V
CE
=6V, I
C
=0.1 , f=1
, Rg=10
MIN.
-
-
120
-
80
-
-
TYP.
-
-
-
0.1
-
2.0
1.0
MAX.
0.1
0.1
400
0.25
-
3.5
10
dB
V
UNIT
DIODE D
1
CHARACTERISTIC
SYMBOL
V
F(1)
Forward Voltage
V
F(2)
V
F(3)
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
t
rr
I
F
=1mA
I
F
=10mA
I
F
=100mA
V
R
=80V
V
R
=0, f=1
I
F
=10
TEST CONDITION
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
0.90
-
0.9
1.6
MAX.
-
-
1.20
0.5
3.0
4.0
V
UNIT
2008. 9. 23
Revision No : 2
2/2
NXP MCU
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