P4KA6.8 thru P4KA43A
Vishay Semiconductors
formerly General Semiconductor
Automotive Transient Voltage Suppressors
ed*
Features
ent
at
P
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
Breakdown Voltage
6.8 to 43V
Peak Pulse Power
400W
0.205 (5.2)
0.160 (4.1)
• Plastic package has underwriters laboratory
flammability classification 94V-0
• Designed for under the hood applications
• Exclusive patented PAR
®
oxide-passivated chip
construction
• 400W peak pulse power capability with a
10/1000µs waveform, repetition rate (duty cycle):
0.01%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• For devices with V
(BR)
≥
10V, I
D
are typically less
than 1.0µA at T
A
= 150°C
• High temperature soldering guaranteed:
300°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
Mechanical Data
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Available in uni-directional only
Dimensions in inches and (millimeters)
*
Patent #’s
4,980,315
5,166,769
5,278,094
Case:
JEDEC DO-204AL molded plastic body over
passivated junction
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
The color band denotes the cathode,
which is positive with respect to the anode under
normal TVS operation
Mounting Position:
Any
Weight:
0.012 oz., 0.3 g
Packaging codes/options:
1/5K per Bulk Box, 50K/box
4/5.5K per 13" Reel (52mm Tape), 22K/box
23/3K per Ammo Box (52mm Tape), 27K/box
Maximum Ratings and Thermal Characteristics
(T
Parameter
Peak pulse power dissipation with a 10/1000µs
waveform
(1)
(Fig. 1)
Peak pulse current with a 10/1000µs waveform
(1)
(Fig.3)
Steady state power dissipation at T
L
= 75°C
lead lengths 0.375" (9.5mm)
(2)
Peak forward surge current, 8.3ms single half sine-wave
(3)
Maximum instantaneous forward voltage at 25A
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
A
= 25°C unless otherwise noted)
Value
Minimum 400
See Next Table
1.0
40
3.5
–65 to +185
Unit
W
A
W
A
V
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
Document Number 88364
03-May-02
www.vishay.com
1
P4KA6.8 thru P4KA43A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Breakdown Voltage
V
(BR)
(1)
at I
T
(V)
Device Type
Min
Max
A
= 25°C unless otherwise noted)
Test
Current
I
T
(mA)
Stand-off
Voltage
V
WM
(V)
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
T
J
= 150°C Maximum
Maximum Peak Pulse
Reverse
Surge
Leakage
Current
at V
WM
I
PPM
(2)
I
D
(µA)
(A)
Maximum
Clamping
Voltage
at l
PPM
V
C
(V)
Maximum
Temp.
Coefficient
of
V
(BR)
(% /
°C)
P4KA6.8
P4KA6.8A
P4KA7.5
P4KA7.5A
P4KA8.2
P4KA8.2A
P4KA9.1
P4KA9.1A
P4KA10
P4KA10A
P4KA11
P4KA11A
P4KA12
P4KA12A
P4KA13
P4KA13A
P4KA15
P4KA15A
P4KA16
P4KA16A
P4KA18
P4KA18A
P4KA20
P4KA20A
P4KA22
P4KA22A
P4KA24
P4KA24A
P4KA27
P4KA27A
P4KA30
P4KA30A
P4KA33
P4KA33A
P4KA36
P4KA36A
P4KA39
P4KA39A
P4KA43
P4KA43A
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.3
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.0
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
300
300
150
150
50
50
10
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1000
1000
500
500
200
200
50
50
20
20
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
37.0
38.1
34.2
35.4
32.0
33.1
29.0
29.9
26.7
27.6
24.7
25.6
23.1
24.0
21.1
22.0
18.2
18.9
17.0
17.8
15.1
15.9
13.7
14.4
12.5
13.1
11.5
12.0
10.2
10.7
9.2
9.7
8.4
8.8
7.7
8.0
7.1
7.4
6.5
6.7
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.5
29.1
27.7
31.9
30.6
34.2
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
0.057
0.057
0.060
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs, I
T
= square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derated per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88364
03-May-02
P4KA6.8 thru P4KA43A
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
P
PPM
— Peak Pulse Power (kW)
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
10
Fig. 2 – Pulse Derating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
75
50
1
25
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
0
0
25
50
75
100
125
150
175
200
td — Pulse Width (sec.)
T
A
— Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
20,000
tr = 10µsec.
Peak Value
I
PPM
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
10,000
Fig. 4 – Typical Junction Capacitance
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
Measured at
Zero Bias
I
PPM
— Peak Pulse Current, % I
RSM
100
Half Value — IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
C
J
— Junction Capacitance (pF)
1,000
Measured at
Stand-Off
Voltage, V
WM
td
0
0
1.0
2.0
3.0
4.0
100
1.0
10
100
200
t — Time (ms)
V
(BR)
— Breakdown Voltage (V)
PM
(AV)
, Steady State Power Dissipation (W)
Fig. 5 – Steady State Power
Derating Curve
I
FSM
— Peak Forward Surge Current (A)
1.00
200
Fig. 6 - Maximum Non-Repetitive/Peak
Forward Surge Current
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
0.75
L = 0.375" (9.5mm)
Lead Lengths
100
0.50
1.58 x 1.58 x 0.040"
(40 x 40 x 1mm)
Copper Heat Sinks
0.25
50
0
10
1
5
10
50
100
0
25
50
75
100
125
150
175
200
T
L
— Lead Temperature (°C)
Number of Cycles at 60 Hz
Document Number 88364
03-May-02
www.vishay.com
3
Microcontroller MCU
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